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An improved model for non-resonant terahertz detection in field-effect transistors
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10.1063/1.3676211
/content/aip/journal/jap/111/2/10.1063/1.3676211
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3676211
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Figures

Image of FIG. 1.
FIG. 1.

(a) Equivalent circuit of a 2DEG FET, including the transmission-line components, l 0, g 0, r 0, and c 0, and (source–gate) access resistance, Racc . We assume that the gate is shorted by a capacitor, C Sh at the drain side. (b) Simplified, reduced equivalent circuit with a lumped element Z 0 characterizing the transmission line for the gate bias (top) and drain–source bias (center). For a large coupling capacitor between the gate and drain, the two equivalent circuits may be combined as shown at the bottom. (c) A layout for a FET mixer where the LO signal is provided on-chip.

Image of FIG. 2.
FIG. 2.

Responsivity vs frequency for a GaAs MODFET with a long gate with a large access resistance. The large scattering originates from standing waves in the system. The large scale oscillations are a result of the (logarithmic) frequency-periodic polarization dependence of the antenna. Inset: the logarithmic periodic antenna used in this experiment.

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/content/aip/journal/jap/111/2/10.1063/1.3676211
2012-01-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An improved model for non-resonant terahertz detection in field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3676211
10.1063/1.3676211
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