(a) PL spectrum in GaAs thin films. (b) dependence of reflectivity-change signal observed at 1.5164 eV. The pump beam was kept at meV and the center energy of 1.5158 eV.
(Color online) Probe-energy dependence of the reflectivity-change signal probed at pulse with meV under the exciton resonance of HH. The top profile was measured by the probe pulse with meV.
Reflectivity change signal probed by a pulse with meV measured at various probe energies.
The detection-energy dependence of reflectivity changes measured using a monochromator. The pump and probe pulses are meV. The resolution of the monochromator was 1.0 meV.
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