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Observation of quantum beat oscillations and ultrafast relaxation of excitons confined in GaAs thin films by controlling probe laser pulses
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10.1063/1.3676429
/content/aip/journal/jap/111/2/10.1063/1.3676429
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3676429
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) PL spectrum in GaAs thin films. (b) dependence of reflectivity-change signal observed at 1.5164 eV. The pump beam was kept at meV and the center energy of 1.5158 eV.

Image of FIG. 2.
FIG. 2.

(Color online) Probe-energy dependence of the reflectivity-change signal probed at pulse with meV under the exciton resonance of HH. The top profile was measured by the probe pulse with meV.

Image of FIG. 3.
FIG. 3.

Reflectivity change signal probed by a pulse with meV measured at various probe energies.

Image of FIG. 4.
FIG. 4.

The detection-energy dependence of reflectivity changes measured using a monochromator. The pump and probe pulses are meV. The resolution of the monochromator was 1.0 meV.

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/content/aip/journal/jap/111/2/10.1063/1.3676429
2012-01-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of quantum beat oscillations and ultrafast relaxation of excitons confined in GaAs thin films by controlling probe laser pulses
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3676429
10.1063/1.3676429
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