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Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
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10.1063/1.3676576
/content/aip/journal/jap/111/2/10.1063/1.3676576
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3676576

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Representative SIMS profiles of N and H in the GaN0.008P0.992 epilayer before and after H treatment.

Image of FIG. 2.
FIG. 2.

(Color online) Representative SIMS profiles of N and H in the GaN0.013As0.987 epilayer (a) and GaN0.016As0.984/GaAs MQW (b) before and after H treatment.

Image of FIG. 3.
FIG. 3.

(Color online) ODMR spectra from GaNP epilayers detected at 5 K by monitoring the PL emission within the visible (550-810 nm) spectral range. The ODMR signals are isotropic and are normalized to the PL intensity. Simulated ODMR signals are displayed in (a) whereas the experimentally measured spectra are shown in (b)-(d) for the specified N compositions. The simulated ODMR spectra are also shown in (b)-(d) by the thin black lines. The spin Hamiltonian parameters used in the simulated spectra are given in Table II.

Image of FIG. 4.
FIG. 4.

(Color online) Typical PL spectra measured at 5 K from the GaNP epilayers with the N compositions of (a) 0.05%, (b) 0.81%, and (c) 1.4%, before and after hydrogenation.

Image of FIG. 5.
FIG. 5.

(Color online) ODMR spectra from GaNAs structures detected at 5 K by monitoring the near band edge emissions. The ODMR signals are isotropic and are normalized to the PL intensity. Simulated ODMR signals are displayed in (a) whereas the experimentally measured spectra are shown in (b)-(d) for the specified N compositions. The simulated ODMR spectra are also shown in (b)-(d) by the thin black lines. The spin Hamiltonian parameters used in the simulated spectra are given in Table II.

Image of FIG. 6.
FIG. 6.

(Color online) Typical PL spectra measured at 5 K before and after post growth hydrogenation from (a) a GaNAs epilayer with [N] = 0.7%, (b) a GaNAs epilayer with [N] = 1.3% and (c) GaNAs/GaAs MQW with [N] = 1.6%. A blueshift of the near-band-edge PL is observed for the GaNAs MQW structure with the highest N content of 1.6% as compared with the epilayer sample with [N] = 1.3% and is due to the quantum confinement effect.

Tables

Generic image for table
Table I.

List of the GaNP and GaNAs samples studied in this work, with the main growth parameters and hydrogen dose in the post-growth hydrogenation. The numbers 5 and 20 in the parentheses refer to the thicknesses of the GaNAs and GaAs layers in the MQW structure.

Generic image for table
Table II.

Spin Hamiltonian parameters and linewidth obtained from the best fit to the experimental ODMR results. The ratio A(71Ga)/A(69Ga) was chosen as 1.27–1.3, i.e., close to that of their nuclear magnetic moments μ(71Ga)/μ(69Ga) = 1.27.

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/content/aip/journal/jap/111/2/10.1063/1.3676576
2012-01-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3676576
10.1063/1.3676576
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