(Color online) Epitaxial structure of the investigated quantum dashes and AFM picture showing 1 × 1 μm2 of the top layer of a 5-layer stack quantum dash structure fabricated with the same techniques as for the one used for the lasers presented in this paper.
(Color online) Pictures of the 4-mm and 1-mm lasers fabricated. Output facet is on the left; saturable absorber section is on the right edge. The three consecutive sections from the output facet (or two for the 1-mm laser) were shortened to make them equivalent to one section during the characterization.
(Color online) Output power vs input current under uniform injection and as a function of the reverse bias voltage over the saturable absorber (SA) for the 4-mm (a) and 1-mm (b) lasers. The black arrows represent the increase direction of the reverse bias voltage.
Optical spectra of the 4-mm and 1-mm lasers for an output power of about 8 mW with absorber section reverse biased.
Pulse width vs filter peak wavelength with eye guide for the 4-mm laser.
RF spectra for the 4-mm laser without chirp compensation and with optimal chirp compensation.
Autocorrelation trace of the 4-mm laser output with +10.9 ps/nm dispersion compensation (540 m SMF) and Gaussian fit.
Autocorrelation trace for the 1-mm laser output with +1.15 ps/nm dispersion compensation (60 m SMF) and Gaussian fit. Inset is the auto/cross-correlation measurement without dispersion compensation.
RF spectra for the 1-mm laser without chirp compensation and with compensation.
(Color online) Single sideband (SSB) phase noise measurement of the 4-mm laser with +10.9 ps/nm dispersion compensation.
(Color online) Jitter measurement of the 4-mm laser with +10.9 ps/nm dispersion compensation.
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