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Ge redistribution in SiO2/SiGe structures under thermal oxidation: Dynamics and predictions
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10.1063/1.3677987
/content/aip/journal/jap/111/2/10.1063/1.3677987
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3677987
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) XPS depth profile of a Si0.85Ge0.15 thin film oxidized at 950 °C for 25 min. The oxide thickness as measured by ellipsometry is 392 Å. The topmost profile is for the surface of the unetched sample. The bottommost profile is at the SiGe layer, as indicated by the presence of metallic Si and Ge.

Image of FIG. 2.
FIG. 2.

(Color online) XPS depth profile of Si0.85Ge0.15 thin film oxidized at 850 °C for 75 min. The oxide thickness as measured by ellipsometry is 356 Å. The topmost profile is for the unetched sample surface. The bottommost profile is at the substrate, as indicated by the presence of metallic Si and the absence of either O or Ge.

Image of FIG. 3.
FIG. 3.

(Color online) Profile of Si0.85Ge0.15 oxidized at 850 °C for 75 min showing relative atomic composition vs depth from XPS measurements. The oxide thickness as measured by ellipsometry is 356 Å.

Image of FIG. 4.
FIG. 4.

(Color online) Gibbs energies for the formation of SiO2 from GeO2 and Si (Ref. 33).

Image of FIG. 5.
FIG. 5.

(Color online) RBS profiles of Ge concentration for Si0.80Ge0.20 oxidized at 900 °C for various times, including an un-oxidized sample. The inset shows two spectra with a broader range, including signals for O, Si, and Ge for two samples with very thin and thick oxides. The spectra are labeled by oxidation time and oxide thickness (from ellipsometry.)

Image of FIG. 6.
FIG. 6.

(Color online) Ge content vs depth from RBS measurements for Si0.85Ge0.15 samples with various oxide thicknesses. Excepting the un-oxidized sample, the oxidation temperature was 900 °C. The profiles are aligned with the oxidation front at depth zero. The spectra are labeled by oxidation temperature, time, and oxide thickness (from ellipsometry.)

Image of FIG. 7.
FIG. 7.

(Color online) Ge content vs depth from RBS measurements for oxidized Si0.85Ge0.15 samples with similar oxide thicknesses but varying oxidation temperatures. The profiles are aligned with the oxidation front at depth zero and labeled according to oxidation temperature, time, and oxide thickness (from ellipsometry.)

Image of FIG. 8.
FIG. 8.

(Color online) Si dose extracted from the pile-up region, tpileupNSiGe-pileupXpileup (1 − X)/X, vs that in the oxide, toxNox , from Eq. (9) with data from this study and other works (Refs. 15–17 and 37). All data points are labeled by the initial Ge content. The oxide and pile-up thickness data from this study are extracted from RBS measurements. The black diagonal in the plot indicates where the x-values equal the y-values.

Image of FIG. 9.
FIG. 9.

(Color online) Ge concentration in the pile-up layer, Xpileup , that satisfies Eq. (10) vs the oxide thickness.

Image of FIG. 10.
FIG. 10.

(Color online) A plot of the scaled ratio of doses from Eq. (10) vs oxide thickness. Here, B = {1 + (1 − Xpileup )X/[Xpileup (1 − X)]}.

Image of FIG. 11.
FIG. 11.

(Color online) A plot of the scaled ratio of doses from Eq. (10) vs temperature. Here, B = {1 + (1 − Xpileup )X/[Xpileup (1 − X)]}.

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/content/aip/journal/jap/111/2/10.1063/1.3677987
2012-01-24
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ge redistribution in SiO2/SiGe structures under thermal oxidation: Dynamics and predictions
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3677987
10.1063/1.3677987
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