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Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs
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10.1063/1.3677995
/content/aip/journal/jap/111/2/10.1063/1.3677995
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3677995

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM micrographs of two samples: (a) 236 nm thick InGaP layer and (b) 45 nm thick InGaP layer grown on (001) GaAs.

Image of FIG. 2.
FIG. 2.

(Color online) GIXD out-of-plane patterns of the 236-nm sample (out-of-plane section) in the vicinity of the (a) 220 and (b) -220 reciprocal lattice points. P marks the position of the sharp Bragg reflection originating from the mean unstrained InGaP layer. The inset above shows the orientation of the scattering vector with respect to the surface undulations. P1 and P2 are caused by the periodic 1 D array of surface undulations.

Image of FIG. 3.
FIG. 3.

(Color online) GIXD in-plane scattering patterns of the 45-nm sample (in-plane section) in the vicinity of the (a) 220 and (b) -220 reciprocal lattice points. P marks the position of the sharp Bragg reflection originating from the mean unstrained InGaP layer. The inset below shows the orientation of the scattering vector with respect to the surface undulations.

Image of FIG. 4.
FIG. 4.

(Color online) Coplanar x-ray diffuse scattering of the 45-nm sample in the vicinity of the asymmetric (a) 113 and (b) -113 reciprocal lattice points. P marks the position of the sharp Bragg reflection originating from the mean unstrained InGaP layer and the GaAs substrate. The inset below shows the orientation of the incoming x-ray beam with respect to the surface undulations. The crystal truncation rod (CTR) shows oscillations originating from the finite thickness of the InGaP layer.

Image of FIG. 5.
FIG. 5.

(Color online) Models for indium distribution in InGaP layers. Regions consisting of lattice matched InGaP are sketched in bright grey (blue) while regions with enhanced indium content are indicated by dark grey (red).

Tables

Generic image for table
Table I.

Parameters of the two samples under study.

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/content/aip/journal/jap/111/2/10.1063/1.3677995
2012-01-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3677995
10.1063/1.3677995
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