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Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness
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10.1063/1.3679522
/content/aip/journal/jap/111/2/10.1063/1.3679522
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3679522
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The optical constants of (a) ITO and (b) IGZO, measured from spectroscopic ellipsometry.

Image of FIG. 2.
FIG. 2.

(Color online) Simulation results on the number of holes collected at the IGZO interface assuming no barrier produced by the transfer matrix method at each wavelength and SiO2 thickness in an (a) ITO/IGZO/SiO2/p++−Si stack and (b) IGZO/SiO2/p++−Si stack.

Image of FIG. 3.
FIG. 3.

(Color online) (a) VD‐ID curves of the fabricated IGZO TFTs at various gate voltages and (b) calculated electric field drop on the IGZO layer according to applied gate bias for IGZO/SiO2 stacks with 100 nm, 200 nm, and 300 nm SiO2 thicknesses.

Image of FIG. 4.
FIG. 4.

(Color online) Hole current data measured in MOSCAP structures with 100 nm, 200 nm, and 300 nm thick SiO2 layers under 0.1 mW/cm2 (a) 450 nm, (b) 500 nm, and (c) 550 nm illumination. Quantitative comparison of simulation results with hole current data for identical samples at a voltage drop of 1 V across the IGZO layer under 0.1 mW/cm2 (d) 450 nm, (e) 500 nm, and (f) 550 nm illumination.

Image of FIG. 5.
FIG. 5.

(Color online) The evolution of transfer curves over time for IGZO TFTs with (a) 100 nm, (b) 200 nm, and (c) 300 nm thick SiO2 layers under NBIS conditions with 450 nm 0.1 mW/cm2 illumination. The Vth shift of IGZO TFTs with 100 nm, 200 nm, and 300 nm thick SiO2 layers when subjected to (d)450nm 0.1 mW/cm2, (e) 500 nm 0.1 mW/cm2, and (f) 550 nm 0.5 mW/cm2 NBIS conditions for 1000 s.

Image of FIG. 6.
FIG. 6.

(Color online) Quantitative comparison of simulation results with the Vth shift values of IGZO TFTs with 100 nm, 200 nm, and 300 nm thick SiO2 layers at 1000s for (a) 450 nm 0.1 mW/cm2, (b) 500 nm 0.1 mW/cm2, and (c) 550 nm 0.5 mW/cm2 NBIS conditions.

Image of FIG. 7.
FIG. 7.

(Color online) The correlation between the number of photo‐carriers generated by simulation results and (a) hole current data and (b) Vth shift values in IGZO systems under 450 nm, 500 nm, and 550 nm illumination.

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/content/aip/journal/jap/111/2/10.1063/1.3679522
2012-01-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/2/10.1063/1.3679522
10.1063/1.3679522
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