(Color online) Schematic structure of SBC gate-type CNT-FET (a) and back gate-type CNT-FET (b) for biosensing.
(Color online) Top view of optical micrograph of SBC gate-type CNT-FET. Drain-source electrode and SiNx insulator layer except for sensing area were covered with waterproofing.
(Color online) Dependence of drain current ID on electrolyte gate voltage VEG of (a) SBC gate-type CNT-FET, and (b) back gate-type CNT-FET. SBC gate voltage VSG and back gate voltage VBG were used as parameters. Drain voltage for both CNT-FETs was maintained at +1 V.
(Color online) Dependence of drain current on time for (a) SBC gate-type CNT-FET sensor and (b) back gate CNT-FET sensor. Drain voltage was maintained at +1 V and electrolyte gate voltage was maintained at 0 V for both sensors. SBC gate voltage and back gate voltage were maintained at +5 V. PSA concentration was modified from 0 M to 10 μM.
(Color online) Dependence of ΔID on PSA concentration of CNT-FET sensors. Results for SBC gate-type CNT-FET sensor are indicated by red circles and those for back gate-type CNT-FET sensor are indicated by blue squares. The bold red line is the Langmuir fitting curve for SBC gate-type CNT-FET and the dotted blue line is that for back gate-type CNT-FET.
(Color online) Two-dimensional model of (a) SBC gate-type CNT-FET sensor, and (c) back gate-type CNT-FET sensor. Expansion of dotted squares in Figs. 3(a) and 3(c) are shown in Figs. 6(b) and 6(d), respectively.
(Color online) Potential profile for SBC gate-type CNT-FET (a). Dotted blue lines plot potential profiles before antigen-antibody reaction and red bold lines plot those after. (b) is an expansion from (a) around antigen-antibody region and (c) is that for CNT-FET channel region.
(Color online) Potential profile for back gate-type CNT-FET (a). Dashed blue lines plot potential profile before antigen-antibody reaction and bold red lines plot those after. (b) is expansion from (a) around antigen-antibody region and (c) is that for CNT-FET channel region.
Element used in models.
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