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Schottky barrier control gate-type carbon nanotube field-effect transistor biosensors
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10.1063/1.3681902
/content/aip/journal/jap/111/3/10.1063/1.3681902
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/3/10.1063/1.3681902

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic structure of SBC gate-type CNT-FET (a) and back gate-type CNT-FET (b) for biosensing.

Image of FIG. 2.
FIG. 2.

(Color online) Top view of optical micrograph of SBC gate-type CNT-FET. Drain-source electrode and SiNx insulator layer except for sensing area were covered with waterproofing.

Image of FIG. 3.
FIG. 3.

(Color online) Dependence of drain current ID on electrolyte gate voltage VEG of (a) SBC gate-type CNT-FET, and (b) back gate-type CNT-FET. SBC gate voltage VSG and back gate voltage VBG were used as parameters. Drain voltage for both CNT-FETs was maintained at +1 V.

Image of FIG. 4.
FIG. 4.

(Color online) Dependence of drain current on time for (a) SBC gate-type CNT-FET sensor and (b) back gate CNT-FET sensor. Drain voltage was maintained at +1 V and electrolyte gate voltage was maintained at 0 V for both sensors. SBC gate voltage and back gate voltage were maintained at +5 V. PSA concentration was modified from 0 M to 10 μM.

Image of FIG. 5.
FIG. 5.

(Color online) Dependence of ΔID on PSA concentration of CNT-FET sensors. Results for SBC gate-type CNT-FET sensor are indicated by red circles and those for back gate-type CNT-FET sensor are indicated by blue squares. The bold red line is the Langmuir fitting curve for SBC gate-type CNT-FET and the dotted blue line is that for back gate-type CNT-FET.

Image of FIG. 6.
FIG. 6.

(Color online) Two-dimensional model of (a) SBC gate-type CNT-FET sensor, and (c) back gate-type CNT-FET sensor. Expansion of dotted squares in Figs. 3(a) and 3(c) are shown in Figs. 6(b) and 6(d), respectively.

Image of FIG. 7.
FIG. 7.

(Color online) Potential profile for SBC gate-type CNT-FET (a). Dotted blue lines plot potential profiles before antigen-antibody reaction and red bold lines plot those after. (b) is an expansion from (a) around antigen-antibody region and (c) is that for CNT-FET channel region.

Image of FIG. 8.
FIG. 8.

(Color online) Potential profile for back gate-type CNT-FET (a). Dashed blue lines plot potential profile before antigen-antibody reaction and bold red lines plot those after. (b) is expansion from (a) around antigen-antibody region and (c) is that for CNT-FET channel region.

Tables

Generic image for table
Table I.

Element used in models.

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/content/aip/journal/jap/111/3/10.1063/1.3681902
2012-02-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Schottky barrier control gate-type carbon nanotube field-effect transistor biosensors
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/3/10.1063/1.3681902
10.1063/1.3681902
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