Schematic drawing of the uniaxial strain apparatus.
(Color online) The real part of RD spectra of InGaAs/GaAs/AlGaAs VCSEL under different strain exy (along ) in unit of e 0 = 2.18 × 10−5. The spectra are shifted vertically for clarity. The circles are experimental data, and the lines denote the fitting results using the right term of Eq. (4). The inset shows the RD intensity of the cavity mode vs strain.
(Color online) The fitting result for the real part of RD spectra of InGaAs/GaAs/AlGaAs VCSEL under zero strain. The squares denote the experimental data, and the solid line is the fitting result using the right term of Eq. (4). The dashed, dotted, and dashed-dotted lines indicate the fitting components corresponding to , , and obtained by experimental measured R 0, respectively.
(Color online) (a) Anisotropy integrated area of the cavity mode ΔA/A (squares, left axis) and broadening width (circles, right axis) as a function of strain exy (along direction) in unit of e 0 = 2.18 × 10−5. The solid lines are calculated results. (b) The mode splitting ΔE (squares) vs strain. The lines are theoretical results.
(Color online) Calculated ΔR spectra under different strain. The inset (a) shows the ΔR intensity of the cavity as a function of strain. The inset (b) depicts the reflectance spectra measured at the same time with RDS (dotted line) and that calculated by theory (solid line), respectively.
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