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Structural and optical evaluation of InGaN/GaN multi-quantum wells on template consisting of in-plane alternately arranged relaxed InGaN and GaN
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10.1063/1.3684606
/content/aip/journal/jap/111/4/10.1063/1.3684606
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3684606

Figures

Image of FIG. 1.
FIG. 1.

(Color online) RSM images of (11–24) and (20–24) planes. The directions of the incident X-ray were perpendicular and parallel to the stripe pattern, which correspond to the (11–24) and (20–24) planes, respectively.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images of (a) InGaN layer obtained by facet growth, and (b) in-plane alternately arranged relaxed InGaN and GaN obtained by mass transport.

Image of FIG. 3.
FIG. 3.

STEM images of MQWs on (a) the planarized relaxed InGaN layer, and (b) the embedded GaN layer.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic illustration of the structure of the MQW on the template composed of in-plane alternately arranged relaxed InGaN and GaN.

Image of FIG. 5.
FIG. 5.

Cross-sectional TEM image of MQWs on the planarized relaxed InGaN layer.

Image of FIG. 6.
FIG. 6.

(Color online) PL spectra of MQWs on (a) template composed of in-plane alternately arranged relaxed InGaN and GaN and (b) conventional GaN template.

Image of FIG. 7.
FIG. 7.

(Color online) Peak wavelength mapping image measured by near-field photoluminescence.

Image of FIG. 8.
FIG. 8.

Calculated piezoelectric field in 3.6-nm-thick In0.254Ga0.746N well layer on InGaN underlayer as a function of InN molar fraction of InGaN underlayer.

Tables

Generic image for table
Table I.

Comparison of MQW structures on the template composed of in-plane alternately arranged relaxed InGaN and GaN and those on conventional GaN template

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/content/aip/journal/jap/111/4/10.1063/1.3684606
2012-02-21
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and optical evaluation of InGaN/GaN multi-quantum wells on template consisting of in-plane alternately arranged relaxed InGaN and GaN
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3684606
10.1063/1.3684606
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