1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Microstructured silicon with two impurity bands for solar cells
Rent:
Rent this article for
USD
10.1063/1.3684669
/content/aip/journal/jap/111/4/10.1063/1.3684669
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3684669

Figures

Image of FIG. 1.
FIG. 1.

Band diagram of silicon after introduction of two impurity bands.

Image of FIG. 2.
FIG. 2.

Sunlight loss rate for silicon introduced with two intermediate bands by sulfur and selenium.

Image of FIG. 3.
FIG. 3.

Sunlight loss rate for silicon introduced with two intermediate bands by sulfur and tellurium.

Image of FIG. 4.
FIG. 4.

Sunlight loss rate for silicon introduced with two intermediate bands by selenium and tellurium.

Image of FIG. 5.
FIG. 5.

Display of the energy band diagram and circuit diagram of four-band solar cell: (a) energy gaps and generated currents; (b) an equivalent circuit in terms of their associated chemical potential.

Image of FIG. 6.
FIG. 6.

Relationship of solar cell conversion efficiency and the voltage when getting minimum sunlight loss rate of four-band Si solar cell model.

Image of FIG. 7.
FIG. 7.

Relationship of solar cell conversion efficiency and the voltage when getting minimum sunlight loss rate of introducing with two intermediate bands of chalcogenide in Si.

Image of FIG. 8.
FIG. 8.

Impact ionization. Absorption of a photon hμ creates a first electron hole pair . The excess energy Ex = hμ − Eg of the electron suffices to generate a second electron hole pair while the electron relaxes toward the conduction-band minimum (e 1′). Conservation of energy E and momentum hk/(2π) is fulfilled if the two dash-dotted arrows add vectorially to zero.26

Image of FIG. 9.
FIG. 9.

Energy level transition considering impact ionization.

Image of FIG. 10.
FIG. 10.

Relationship between the solar cell conversion efficiency and the parameter ɛ.

Tables

Generic image for table
Table I.

Level energies for the chalcogen impurities S, Se, and Te in Si.

Loading

Article metrics loading...

/content/aip/journal/jap/111/4/10.1063/1.3684669
2012-02-16
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microstructured silicon with two impurity bands for solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3684669
10.1063/1.3684669
SEARCH_EXPAND_ITEM