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Phase transformation and crystallization kinetics of a-Ge/Cu bilayer for blue-ray recording under thermal annealing and pulsed laser irradiation
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10.1063/1.3684966
/content/aip/journal/jap/111/4/10.1063/1.3684966
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3684966
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Reflectivity variations with temperature for the as-deposited a-Ge/Cu bilayer at heating rates of 5 °C, 10 °C, 20 °C, and 40 °C/min.

Image of FIG. 2.
FIG. 2.

TEM images and SAED patterns of the a-Ge/Cu bilayers (a) in the as-deposited state and after annealing at (b) 250 °C and (c) 350 °C.

Image of FIG. 3.
FIG. 3.

Auger depth profiles of the Ge and Cu concentrations in the a-Ge/Cu bilayer before and after annealing at 250 °C and 350 °C.

Image of FIG. 4.
FIG. 4.

Plots of ln(α/Tx 2) vs (1/Tx ) for the a-Ge/Cu bilayer and a-Ge single layer.

Image of FIG. 5.
FIG. 5.

(a) Fraction of crystallization as a function of time, and (b) ln[−ln(1−X)] vs ln(t−t 0) plots for the a-Ge/Cu bilayer isothermally annealed at 300 °C, 295 °C, and 290 °C.

Image of FIG. 6.
FIG. 6.

TEM images of the a-Ge/Ni bilayer after irradiation (a) by blue pulsed lasers with various powers and durations, and by a pulsed laser with a power of 5 mW for (b) 30 ns, (c) 50 ns, and (d) 100 ns.

Image of FIG. 7.
FIG. 7.

Wavelength (λ) dependence of the (a) reflectivity and (b) absorptance of the a-Ge/Cu bilayer in the as-deposited state and after Cu3Ge phase formation and a-Ge crystallization.

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/content/aip/journal/jap/111/4/10.1063/1.3684966
2012-02-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase transformation and crystallization kinetics of a-Ge/Cu bilayer for blue-ray recording under thermal annealing and pulsed laser irradiation
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3684966
10.1063/1.3684966
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