Reflectivity variations with temperature for the as-deposited a-Ge/Cu bilayer at heating rates of 5 °C, 10 °C, 20 °C, and 40 °C/min.
TEM images and SAED patterns of the a-Ge/Cu bilayers (a) in the as-deposited state and after annealing at (b) 250 °C and (c) 350 °C.
Auger depth profiles of the Ge and Cu concentrations in the a-Ge/Cu bilayer before and after annealing at 250 °C and 350 °C.
Plots of ln(α/Tx 2) vs (1/Tx ) for the a-Ge/Cu bilayer and a-Ge single layer.
(a) Fraction of crystallization as a function of time, and (b) ln[−ln(1−X)] vs ln(t−t 0) plots for the a-Ge/Cu bilayer isothermally annealed at 300 °C, 295 °C, and 290 °C.
TEM images of the a-Ge/Ni bilayer after irradiation (a) by blue pulsed lasers with various powers and durations, and by a pulsed laser with a power of 5 mW for (b) 30 ns, (c) 50 ns, and (d) 100 ns.
Wavelength (λ) dependence of the (a) reflectivity and (b) absorptance of the a-Ge/Cu bilayer in the as-deposited state and after Cu3Ge phase formation and a-Ge crystallization.
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