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Dark field (200) cross-sectional TEM images of 30-layer InAs/GaAs QDSC structures (a) with and (b) without HGTSL. The growth direction is in the vertical direction for these two images.
(Color online) Arrhenius plots of temperature-dependent PL intensity for the QDSCs with and without HGTSL. The inset shows RT and 10 K PL spectral of the QDSC sample with HGSTL and the 10 K PL spectrum of QDSC without HGTSL.
(Color online) (a) Current density vs voltage curves of InAs/GaAs QDSCs with and without HGTSL and the reference GaAs solar cell. (b) External quantum efficiency (EQE) of InAs/GaAs QDSCs with and without the HGTSL and the reference GaAs solar cell. The inset shows schematic band diagram of InAs/InGaAs dot-in-a-well structure.
Short-circuit current (Jsc), open current voltage (Voc), fill factor (FF), and efficiency (η) for QDSC with and without HGTSL and GaAs SC under 1 sun AM1.5 illumination.
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