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Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
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10.1063/1.3686184
/content/aip/journal/jap/111/4/10.1063/1.3686184
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3686184

Figures

Image of FIG. 1.
FIG. 1.

Dark field (200) cross-sectional TEM images of 30-layer InAs/GaAs QDSC structures (a) with and (b) without HGTSL. The growth direction is in the vertical direction for these two images.

Image of FIG. 2.
FIG. 2.

(Color online) Arrhenius plots of temperature-dependent PL intensity for the QDSCs with and without HGTSL. The inset shows RT and 10 K PL spectral of the QDSC sample with HGSTL and the 10 K PL spectrum of QDSC without HGTSL.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Current density vs voltage curves of InAs/GaAs QDSCs with and without HGTSL and the reference GaAs solar cell. (b) External quantum efficiency (EQE) of InAs/GaAs QDSCs with and without the HGTSL and the reference GaAs solar cell. The inset shows schematic band diagram of InAs/InGaAs dot-in-a-well structure.

Tables

Generic image for table
Table I.

Short-circuit current (Jsc), open current voltage (Voc), fill factor (FF), and efficiency (η) for QDSC with and without HGTSL and GaAs SC under 1 sun AM1.5 illumination.

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/content/aip/journal/jap/111/4/10.1063/1.3686184
2012-02-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3686184
10.1063/1.3686184
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