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Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs
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10.1063/1.3686628
/content/aip/journal/jap/111/4/10.1063/1.3686628
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3686628
/content/aip/journal/jap/111/4/10.1063/1.3686628
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/content/aip/journal/jap/111/4/10.1063/1.3686628
2012-02-28
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/4/10.1063/1.3686628
10.1063/1.3686628
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