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Thermoplastic deformation of silicon surfaces induced by ultrashort pulsed lasers in submelting conditions
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10.1063/1.3688020
/content/aip/journal/jap/111/5/10.1063/1.3688020
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3688020

Figures

Image of FIG. 1.
FIG. 1.

Irradiation of a non-flat Si-surface with a Gaussian beam. Incident (denoted by the index i) and surface scattered waves (denoted by the index s) are depicted in the inset. Wave vectors and direction of the electric field of the two waves are sketched.

Image of FIG. 2.
FIG. 2.

(Color online) Stress component σrr at t = 1 ns (a). Radial dependence of σrr at three different locations inside the material is also illustrated (b).

Image of FIG. 3.
FIG. 3.

(Color online) Stress component σzz at t = 1 ns (a). Axial dependence of σzz at three different values of the radial distance is also illustrated (b).

Image of FIG. 4.
FIG. 4.

(Color online) (a) Von Mises stress component at t = 1 ns. (b) Radial dependence of at three different locations inside the material. (c) Axial dependence of at three different locations inside the material. (d) Yield stress spatial distribution at t = 1 ns.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Spatial distribution of vertical displacement at t = 1 ns. (b) Vertical displacement dependence on the axial distance.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Illustration of von Mises stress component at t = 1 ns. Region inside the white border is plastically deformed. (b) Spatial distribution of vertical displacement at t = 1 ns and t = 100 ns for NP = 1.

Image of FIG. 7.
FIG. 7.

(Color online) (a) Correlation between maximum vertical displacement and fluence values in submelting conditions for NP = 1 for a Gaussian beam of peak fluence Ep  = 0.13 J/cm2. (b) Spatial distribution of vertical displacement after irradiation with a Gaussian beam of peak fluence Ep  = 0.13 J/cm2 at t = 100 ns for NP = 600, 800, 1000 (xz-plane profile).

Image of FIG. 8.
FIG. 8.

(Color online) (a) Ripple formation (simulation results) for NP = 1000. (b) Spatial distribution of vertical displacement at y = 1.84 μm.

Image of FIG. 9.
FIG. 9.

(a) Correlation between maximum vertical displacement and number of pulses, (b) Dependence of ripple periodicity on the number of pulses.

Image of FIG. 10.
FIG. 10.

(a) SEM image after irradiation with 1000 pulses (p-polarised beam). (b) Intensity profile across dashed white line in Fig. 9 (circles illustrate the local minima of the ripples). (c) Fast Fourier transform of the intensity image and computation of the most pronounced period.

Tables

Generic image for table
Table I.

Model parameters for Si.

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/content/aip/journal/jap/111/5/10.1063/1.3688020
2012-03-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermoplastic deformation of silicon surfaces induced by ultrashort pulsed lasers in submelting conditions
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3688020
10.1063/1.3688020
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