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Thermal effects in 2.x μm vertical-external-cavity-surface-emitting lasers
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10.1063/1.3691228
/content/aip/journal/jap/111/5/10.1063/1.3691228
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3691228

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Scheme of the V-TR configuration of the thermoreflectance experimental setup. The VECSEL chip clamped into a copper sample holder is mounted on the temperature stabilized heatsink, placed together with the pump optics and the external cavity on the motorized x-y-z stages.

Image of FIG. 2.
FIG. 2.

(Color online) Maximal temperature increases for optical pumping VECSEL chips without a heatspreader (HS) and with SiC and diamond heatspreaders.

Image of FIG. 3.
FIG. 3.

(Color online) (a) The temperature increases calculated assuming reflection from the sample’s surface (circles) and reflection and emission (triangles). For comparison, the results calculated without consideration ofthese processes are also included (inverted triangles). (b) Graphical representation of the heat balance of the optically pumped VECSEL.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Temperature distribution map for operating VECSEL without SiC heatspreader. (b) Comparison of radial temperature profiles for lasing and non-lasing device (right). tpulse = 0.5 ms, duty cycle = 25%, incident pump power = 3.6 W.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Temperature distribution map for operating VECSEL with SiC heatspreader. (b) Comparison of radial temperature profiles for lasing and non-lasing device. tpulse = 0.5 ms, duty cycle = 25% , incident pump power = 3.6 W.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Comparison of maximal temperature increases for operating and non-operating VECSEL without a heatspreader (circles) and for VECSEL with A SiC heatspreader (squares). In both cases black corresponds to non-lasing device. (b) Difference in the maximal temperature increases between lasing and non-lasing devices.

Image of FIG. 7.
FIG. 7.

(Color online) Power conversion curve and registered temperature difference (ΔT = ΔToff − ΔTon) for a given pump power.

Tables

Generic image for table
Table I.

Thermal conductivities and layer thicknesses used in the simulations.

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Table II.

Summary of experimental and numerical results for VECSEL chips without and with a SiC heatspreader (HS).

Generic image for table
Table III.

Comparison of maximum temperature increases and FWHM of temperature profiles for VECSELs with and without an intracavity heatspreader (HS). FWHM_H and FWHM_V stand for horizontal and vertical profiles, and the observed asymmetry of their values is the result of pumping devices at an angle.

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/content/aip/journal/jap/111/5/10.1063/1.3691228
2012-03-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal effects in 2.x μm vertical-external-cavity-surface-emitting lasers
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3691228
10.1063/1.3691228
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