1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Identification of different origins for s-shaped current voltage characteristics in planar heterojunction organic solar cells
Rent:
Rent this article for
USD
10.1063/1.3692050
/content/aip/journal/jap/111/5/10.1063/1.3692050
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3692050

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Chemical structure of DIP, C60, and BCP; schematic layout of the PHJ solar cells (b); and top-contact OFETs (c).

Image of FIG. 2.
FIG. 2.

(Color online) Current voltage characteristics of PHJ solar cells. (a) Devices A-D: ITO/ PEDOT:PSS/ DIP(50 nm)/ C60(50 nm)/ BCP(5 nm)/ Al cells with different substrate temperatures during DIP evaporation. (b) Device E: ITO/ HIL1.3/ DIP(50 nm)/ C60(50 nm)/ BCP(5 nm)/ Al cell with DIP evaporated at room temperature. (c) Devices F-I: ITO/ PEDOT:PSS/ DIP(50 nm)/ C60(50 nm)/ BCP(5 nm)/ Al cells with different DIP source batches. Upper parts: j-V characteristics under white LED illumination. Lower parts: Logarithmic plot of the dark j-V characteristics (open symbols). The solid lines are fits based on the modified diode equation. Results of the fits are given in Table I.

Image of FIG. 3.
FIG. 3.

(Color online) AFM image of (a) ITO/PEDOT:PSS/DIP (50 nm) on unheated substrate, (b) ITO/PEDOT:PSS/DIP (50 nm) evaporated at substrate temperature of 100 °C, (c) ITO/PEDOT:PSS/DIP (5 nm, substrate temperature 100 °C), and (d) ITO/PEDOT:PSS/DIP (5 nm, substrate temperature 100 °C)/DIP (45 nm, RT). The total image size is 4 × 4 μm2 in all cases.

Image of FIG. 4.
FIG. 4.

Ultraviolet photoelectron spectra of heated (straight lines) and unheated (dashed lines) ITO/PEDOT:PSS substrates with different coverage of DIP. (a) Secondary electron cutoff (SECO) spectrum and (b) valence region spectrum.

Image of FIG. 5.
FIG. 5.

(Color online) Schematic energy level diagrams for (a) DIP on unheated ITO/PEDOT:PSS and (b) on heated ITO/PEDOT:PSS, and (c) DIP on unheated ITO/HIL1.3. The transport gap of DIP is assumed to be 2.5 eV (Ref.60).

Image of FIG. 6.
FIG. 6.

(Color online) Transfer characteristics in the linear range for unipolar devices with different electrode materials (channel length 70 μm). (a) Hole transport regime (negative gate voltage) at a drain voltage of V D = −2 V and (b) electron transport regime (positive gate voltage) at a given drain voltage of V D = +2 V. Each measurement consists of a forward-and backward voltage sweep, manifesting in a hysteresis, respectively.

Image of FIG. 7.
FIG. 7.

Mass spectrometry measurements of two DIP batches. The range of m/z between 0 and 190 was multiplied by a factor of 5 for better illustration of the impurity level.

Image of FIG. 8.
FIG. 8.

Ultraviolet photoelectron spectra of ITO/HIL1.3/C60 substrates with different coverage of Sm. (a) Secondary electron cutoff (SECO) spectrum and (b) valence region spectrum.

Image of FIG. 9.
FIG. 9.

(Color online) Current voltage characteristics of PHJ solar cells of the structure ITO/ (hole injection layer)/ DIP(50 nm)/ C60(50 nm)/ (top contact) cells with different top contacts, i.e., with and without BCP(5 nm) and Sm (DIP evaporated at room temperature). (a) Devices J - M: PE- DOT:PSS as hole injection layer, (b) devices N−Q: HIL1.3 as hole injection layer. Upper parts: j-V characteristics under white LED illumination. Lower parts: Logarithmic plot of the dark j-V characteristics (open symbols). The solid lines are fits based on the modified diode equation. Results of the fits are given in Table I.

Tables

Generic image for table
Table I.

Open circuit voltage V oc, short circuit current density j sc, fill factor FF, series resistance R S, and ideality factor n for solar cells with different hole injection layers (HILs) and substrate treatment during evaporation. Nominally equal samples might differ in their characteristics if not fabricated in the same evaporation run. It has to be mentioned that devices E and P are identical samples.

Loading

Article metrics loading...

/content/aip/journal/jap/111/5/10.1063/1.3692050
2012-03-08
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of different origins for s-shaped current voltage characteristics in planar heterojunction organic solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3692050
10.1063/1.3692050
SEARCH_EXPAND_ITEM