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Analytical model for reduction of deep levels in SiC by thermal oxidation
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10.1063/1.3692766
/content/aip/journal/jap/111/5/10.1063/1.3692766
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3692766

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic model for reduction of the Z1/2 and EH6/7 centers during oxidation. Interstitials generated at the SiO2/SiC interface diffuse into SiC bulk, and occupy carbon vacancies related to the Z1/2 and EH6/7 centers.

Image of FIG. 2.
FIG. 2.

(Color online) DLTS spectra of the n-type 4H-SiC after thermal oxidation at 1300 °C for 1.3 h (dashed line) and C+ implantation followed by Ar annealing at 1800 °C for 20 min (dashed-dotted line).

Image of FIG. 3.
FIG. 3.

(Color online) DLTS spectra of the p-type 4H-SiC after thermal oxidation at 1300 °C for 1.3 h (dashed line) and C+ implantation followed by Ar annealing at 1300 °C for 20 min (dashed-dotted line).

Image of FIG. 4.
FIG. 4.

(Color online) Depth profiles of ON1 center after oxidation at various temperatures for 1.3 h. Each symbol indicates the experimental data and each line indicates the calculated n I distribution obtained from Eqs. (1)–(8).

Image of FIG. 5.
FIG. 5.

(Color online) Depth profiles of Z1/2 center after oxidation at various temperatures for 1.3 h. The initial Z1/2-concentration is 1.7 × 1014 cm−3. Each symbol indicates the experimental data and each line indicates the calculated n V distribution obtained from Eqs. (1)–(8).

Image of FIG. 6.
FIG. 6.

(Color online) Dependence of the oxide growth rate on oxidation time at different oxidation temperatures. A result (1100 °C) reported by Hijikata et al. 22 is also shown as a solid line.

Image of FIG. 7.
FIG. 7.

(Color online) Depth profiles of Z1/2 center after oxidation at various temperatures for 1.3 h. The initial Z1/2-concentration is 2 × 1013 cm−3. Each symbol indicates the experimental data and each line indicates the calculated n V distribution obtained from Eqs. (1)–(8).

Image of FIG. 8.
FIG. 8.

(Color online) Effects of changing parameters, D, F 0, and γ, on calculated n V profile. Higher D/F 0/γ is used in the calculation for dashed/dotted/dashed-dotted line compared to the calculation for reference (solid line).

Image of FIG. 9.
FIG. 9.

(Color online) Depth profiles of Z1/2 center (initial Z1/2-concentration: 1.3 × 1013 cm−3) after oxidation at 1300 °C for 1.3-15.9 h. Each symbol indicates the experimental data and each line indicates the calculated n V distribution.

Image of FIG. 10.
FIG. 10.

(Color online) Depth profiles of Z1/2 center (initial Z1/2-concentration: 2 × 1012 cm−3) after oxidation at 1300 °C for 5.3-15.9 h. Each symbol indicates the experimental data and each line indicates the calculated n V distribution.

Image of FIG. 11.
FIG. 11.

(Color online) Calculated results of Z1/2 profiles for various oxidation times and different initial-Z1/2-concentrations (2 × 1012 cm−3, 1.3 × 1013 cm−3) using the parameters obtained in this study. It was assumed that n V corresponds to the Z1/2 concentration.

Image of FIG. 12.
FIG. 12.

(Color online) Depth profiles of Z1/2 center after oxidation at 1300 °C for 15.9 h. The rhombuses denote the experimental result for continuous 15.9-h oxidation (dashed line: calculated n V result with the parameters in Table II), and reverse triangles for 15.9-h oxidation with removing the oxide layer after every 5.3-h oxidation (solid line: calculated n V result with the parameters in Table II).

Image of FIG. 13.
FIG. 13.

(Color online) Z1/2 profiles after oxidation and after oxidation followed by 1500 °C annealing. The reverse triangles denote the experimental result for after oxidation at 1300 °C for 15.9 h (solid line: calculated n V result with the parameters in Table II), and the closed circles for the oxidation and subsequent annealing at 1500 °C for 2 h in Ar ambient (dashed line: calculated n V result with the parameters in Table II).

Image of FIG. 14.
FIG. 14.

(Color online) Depth profiles of Z1/2 center after oxidation at 1400 °C for 5.5 h and 16.5 h. The dotted line indicates the n V profile after 5.5-h oxidation calculated with the parameters in Table II and each symbol indicates experimental data. Calculated line for 16.5-h oxidation is not shown because the n V is lower than 1 × 1010 cm−3 in the 96-μm-thick epilayer.

Image of FIG. 15.
FIG. 15.

(Color online) μ-PCD decay curves for the 96-μm-thick n-type 4H-SiC epilayers after different oxidation processes. The oxidation temperature is 1300 °C except for the signal labeled “1400 °C.”

Image of FIG. 16.
FIG. 16.

(Color online) Depth profiles of Z1/2 concentration in the same samples as in Fig. 15.

Image of FIG. 17.
FIG. 17.

Schematic illustration of an SiC epilayer grown on an SiC substrate after thermal oxidation. Carrier lifetimes in the Z1/2-eliminated region and the Z1/2-remaining region are assumed to be 50 μs and 0.7 μs, respectively.

Tables

Generic image for table
Table I.

Reduced and generated defects in SiC by C+-implantation process and by thermal oxidation. The conduction types of the samples where each defect is observed are shown in parentheses.

Generic image for table
Table II.

Parameter values obtained by fitting results of calculated n V profiles based on Eqs. (1)–(8) and experimental Z1/2 profiles shown in Fig. 5. The top row indicates the “X” in the first column.

Generic image for table
Table III.

Comparison between carrier lifetimes measured by µ-PCD and effective carrier lifetimes predicted by calculation based on a diffusion equation (Ref. 31). Initial Z1/2 concentration is 1.3 × 1013 cm−3.

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/content/aip/journal/jap/111/5/10.1063/1.3692766
2012-03-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analytical model for reduction of deep levels in SiC by thermal oxidation
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3692766
10.1063/1.3692766
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