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Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN
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10.1063/1.3693039
/content/aip/journal/jap/111/5/10.1063/1.3693039
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3693039
/content/aip/journal/jap/111/5/10.1063/1.3693039
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/content/aip/journal/jap/111/5/10.1063/1.3693039
2012-03-15
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3693039
10.1063/1.3693039
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