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SixSb2Te materials with stable phase for phase change random access memory applications
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10.1063/1.3693557
/content/aip/journal/jap/111/5/10.1063/1.3693557
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3693557

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Resistance as a function of temperature with various compositions of SixSb2Te compared with Ge2Sb2Te5 (heating rate dT/dt = 20 K/min).

Image of FIG. 2.
FIG. 2.

Fitting curves for calculating electrical activation energies of Ge2Sb2Te5, Sb2Te, and SixSb2Te materials.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Sheet resistance of Si0.44Sb2Te film as a function of temperature with various heating rates; (b) corresponding Kissinger’s plot for calculation.

Image of FIG. 4.
FIG. 4.

(Color online) (a) The plots of normalized resistance vs time at different isothermal annealing temperatures for Si0.44Sb2Te film; (b) corresponding Arrhenius fitting plot of failure time vs reciprocal temperature.

Image of FIG. 5.
FIG. 5.

Arrhenius fitting plots for Ge2Sb2Te5 and all compositions of SixSb2Te and the temperatures corresponding to the 10-year data retention marked.

Image of FIG. 6.
FIG. 6.

XRD pattern of annealed Sb2Te film at 180 °C for 1 min.

Image of FIG. 7.
FIG. 7.

(Color online) XRD pattern of annealed SixSb2Te films at various temperatures: (a) Si0.31Sb2Te at 200 °C for 1 min; (b) Si0.44Sb2Te at 300 °C for 1 min; (c) Si0.81Sb2Te at 300 °C for 1 min; (d) Si1.64Sb2Te at 400 °C for 1 min; (e) Si3.46Sb2Te at 400 °C for 1 min.

Image of FIG. 8.
FIG. 8.

TEM images and SAED patterns of Si0.31Sb2Te films with in situ heating.

Image of FIG. 9.
FIG. 9.

TEM images and SAED patterns of Si0.44Sb2Te films with in situ heating.

Image of FIG. 10.
FIG. 10.

TEM images and SAED patterns of Si1.64Sb2Te films with in situ heating.

Image of FIG. 11.
FIG. 11.

XRR measurement of Si0.31Sb2Te film in the as-deposited and annealed states. The inset is the plot of amendatory Bragg fitting curve.

Image of FIG. 12.
FIG. 12.

(Color online) I–V characteristic curves of PCRAM cells based on Si0.31Sb2Te and Si0.44Sb2Te.

Image of FIG. 13.
FIG. 13.

(Color online) SET-RESET window characteristic curves of PCRAM cells based on Si0.31Sb2Te and Si0.44Sb2Te with the voltage pulse width of 100 ns.

Image of FIG. 14.
FIG. 14.

(Color online) Endurance characteristic curves of PCRAM cells based on Si0.31Sb2Te and Si0.44Sb2Te: (a) Si0.31Sb2Te with RESET pulse of 3.2 V, 100 ns and SET pulse of 2.0 V 1000 ns; (b) Si0.44Sb2Te with RESET pulse of 3.7 V, 200 ns and SET pulse of 2.5 V 1000 ns.

Tables

Generic image for table
Table I.

Measured crystallization temperatures and calculated activation energies for electrical conduction, crystallization activation energies, and 10-year data retention temperatures for Ge2Sb2Te5 and SixSb2Te films.

Generic image for table
Table II.

Gain size for various compositions of annealed SixSb2Te films corresponding to XRD measurement.

Generic image for table
Table III.

The thickness reduction between amorphous and crystalline phase for Ge2Sb2Te5 and SixSb2Te films.

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/content/aip/journal/jap/111/5/10.1063/1.3693557
2012-03-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SixSb2Te materials with stable phase for phase change random access memory applications
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/5/10.1063/1.3693557
10.1063/1.3693557
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