(Color online) Schematics showing (a) the self-aligned silicidation process for CoSi2 patterning on Si, (b) the effects of SF6 RIE treatment and CVD on CoSi2 layer. (c)–(e) Scanning and transmission electron microscopy micrographs of CNT forest grown for 5 min. The scale bars are 5 μm in (c), 200 nm in (d) and 10 nm in (e).
In situ XP spectra of (a) Co2p and (b) F1s of CoSi2 in as-prepared state, after SF6 RIE treatment and during H2 annealing (from bottom to top). The peak evolution fully confirms our suggested chemical mechanisms during the process flow in Fig. 1(b).
(Color online) Atomic force microscope (AFM) images of (a) as-prepared CoSi2 layer, (b) after RIE treatment, (c) after annealing in H2. The scale bars are 200 nm. (d) Typical line scans of the corresponding images.
(Color online) Cross section of (a) the via hole structure with CoSi2 at the bottom (b) the horizontal device structure with CoSi2 patterned on the vertical surfaces of the electrode. (c) SEM images of CNTs grown from the 200 nm via holes. (d)–(f) Cross section of the via hole after CNT growth. The samples were tilted by 45° under SEM. CNT collapse in (f) is due to sample cutting in order to reveal the clean sidewall of the via. (g) Horizontally aligned CNTs grown from CoSi2 patterned on a vertical surface of a straight line pattern. (h) A two electrode CNT horizontal interconnect. The scale bars are 5μm in (c) and 1 μm in (g), (h).
(Color online) Typical I-V and R-V curves measured on a horizontal CNT interconnect with 400 nm spacing; the measured resistance is about 20kΩ for 5–10 MWNTs (estimated from SEM).
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