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Multiexcitonic emission from single elongated InGaAs/GaAs quantum dots
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10.1063/1.3695458
/content/aip/journal/jap/111/6/10.1063/1.3695458
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/6/10.1063/1.3695458
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Low-temperature microphotoluminescence spectra of single In0.3Ga0.7As/GaAs quantum dots from 300 nm × 300 nm size mesas (X or X′ − exciton and XX or XX′ − biexciton in low excitation regime; MX or MX′ − redshifting broad emission band in high excitation regime) measured for excitation power Pexc (measured outside the cryostat) varied from 0.1μW to 50 μW (a) and from 1 μW to 300 μW (b), respectively. Simulations have been performed for the lower energy dot from graph (b).

Image of FIG. 2.
FIG. 2.

Simulated photoluminescence spectra from a single In0.3Ga0.7As/GaAs quantum dot as a function of excitation rate, G, obtained for four energy separation, dE, values varied from 0.4 to 2.0 meV.

Image of FIG. 3.
FIG. 3.

Simulated photoluminescence spectra from a single In0.3Ga0.7As/GaAs quantum dot as a function of excitation rate, G, obtained for four different values of full width at half maximum of exciton line, FWHM X , varied from 0.4 to 1.8 meV for the lowest excitation rate.

Image of FIG. 4.
FIG. 4.

Simulated photoluminescence spectra from a single In0.3Ga0.7As/GaAs quantum dot as a function of excitation rate, G, obtained for four different radiative lifetimes, τ HE , of states interacting with QD biexcitons. τ HE is varied from 30 ps (QD p-states) to 900 ps (WL states). Spectra are calculated for the same I XX /I X values marked with the solid horizontal line in Fig. 5.

Image of FIG. 5.
FIG. 5.

I XX /I X dependence on excitation rate, G, calculated for a single In0.3Ga0.7As/GaAs quantum dot for different radiative lifetimes, τ HE , of states interacting with QD biexcitons corresponding to spectra presented in Fig. 4. Maximum and minimum values of I XX /I X are marked by the thickest solid black line and black circles to compare spectra on Fig. 4. The top scale (gray scale and points) shows measured I XX /I X dependence on excitation power.

Image of FIG. 6.
FIG. 6.

Experimental (a) and calculated (b) normalized microphotoluminescence spectra of a single In0.3Ga0.7As/GaAs quantum dot as a function of excitation power, assuming the QD biexciton to interact with states localized in the WL. X and XX emission lines are marked in the low excitation regime, and the MX emission peak is marked in the high excitation regime.

Image of FIG. 7.
FIG. 7.

Graph presenting pairs of the excitation rate, G, value and the corresponding excitation power for which best match of simulated and measured spectra have been obtained (square points) and exponential fit (solid line).

Image of FIG. 8.
FIG. 8.

Comparison of measured (dots) and simulated (solid line) microphotoluminescence spectra from single In0.3Ga0.7As/GaAs quantum dot for six selected excitation powers and corresponding generation rates (Fig. 7).

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/content/aip/journal/jap/111/6/10.1063/1.3695458
2012-03-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multiexcitonic emission from single elongated InGaAs/GaAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/6/10.1063/1.3695458
10.1063/1.3695458
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