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Electronic properties of W-encapsulated Si cluster film on Si (100) substrates
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10.1063/1.3695994
/content/aip/journal/jap/111/6/10.1063/1.3695994
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/6/10.1063/1.3695994
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-section bright-field STEM images of a WSi10 film deposited on Si (100) viewed from the [110] direction and (b) magnified interface region of (a).

Image of FIG. 2.
FIG. 2.

EELS spectra of a WSi10 film on a c-Si substrate at different measurement positions. The WSi2 spectrum is also displayed for comparison. All spectra have been normalized by their elastic peak intensities.

Image of FIG. 3.
FIG. 3.

Plasmon spectrum of the interface region fitted with two Lorentzian functions.

Image of FIG. 4.
FIG. 4.

Si-L23 absorption edge spectra of c-Si, interface, and amorphous WSi10 regions (a); zoomed in on the Si-L23 absorption edge spectra (b).

Image of FIG. 5.
FIG. 5.

XPS spectra of the WSi10 and WSi2 films on Si (100) substrates and of a Si (100) 2 × 1 substrate in two binding energy ranges: (a) 0 eV to 15 eV and (b) 0 eV to 5 eV.

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/content/aip/journal/jap/111/6/10.1063/1.3695994
2012-03-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic properties of W-encapsulated Si cluster film on Si (100) substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/6/10.1063/1.3695994
10.1063/1.3695994
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