(a) Cross-section bright-field STEM images of a WSi10 film deposited on Si (100) viewed from the  direction and (b) magnified interface region of (a).
EELS spectra of a WSi10 film on a c-Si substrate at different measurement positions. The WSi2 spectrum is also displayed for comparison. All spectra have been normalized by their elastic peak intensities.
Plasmon spectrum of the interface region fitted with two Lorentzian functions.
Si-L23 absorption edge spectra of c-Si, interface, and amorphous WSi10 regions (a); zoomed in on the Si-L23 absorption edge spectra (b).
XPS spectra of the WSi10 and WSi2 films on Si (100) substrates and of a Si (100) 2 × 1 substrate in two binding energy ranges: (a) 0 eV to 15 eV and (b) 0 eV to 5 eV.
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