Transmission electron micrograph (TEM) of a sample with five layers of SiGe islands (lighter areas) embedded into a Si matrix (darker gray area). The SiGe island base is ~120–150 nm long, and the island height is <20 nm.
The PL spectra of Si/SiGe nanostructures under ~0.1 W/cm2 of 325nm excitation observed before (initial) and after (fatigued) continuous exposure for 20 min. The sample temperature is T = 16 K.
The PL transients showing the onsets (arrows) of the PL fatigue recorded at 0.82 eV at different (marked) excitation intensities. The excitation wavelength is 405 nm and sample temperature is T = 16 K.
The PL intensity transients recorded at 0.82 eV under 50 mW power and 325 nm wavelength CW excitation. Measurements are performed at different (indicated) temperatures.
Evolution of the rates of radiative recombination and Auger recombination in SiGe nanoislands with a volume of ~10−16 cm3.
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