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Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures
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10.1063/1.3698303
/content/aip/journal/jap/111/6/10.1063/1.3698303
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/6/10.1063/1.3698303
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transmission electron micrograph (TEM) of a sample with five layers of SiGe islands (lighter areas) embedded into a Si matrix (darker gray area). The SiGe island base is ~120–150 nm long, and the island height is <20 nm.

Image of FIG. 2.
FIG. 2.

The PL spectra of Si/SiGe nanostructures under ~0.1 W/cm2 of 325nm excitation observed before (initial) and after (fatigued) continuous exposure for 20 min. The sample temperature is T = 16 K.

Image of FIG. 3.
FIG. 3.

The PL transients showing the onsets (arrows) of the PL fatigue recorded at 0.82 eV at different (marked) excitation intensities. The excitation wavelength is 405 nm and sample temperature is T = 16 K.

Image of FIG. 4.
FIG. 4.

The PL intensity transients recorded at 0.82 eV under 50 mW power and 325 nm wavelength CW excitation. Measurements are performed at different (indicated) temperatures.

Image of FIG. 5.
FIG. 5.

Evolution of the rates of radiative recombination and Auger recombination in SiGe nanoislands with a volume of ~10−16 cm3.

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/content/aip/journal/jap/111/6/10.1063/1.3698303
2012-03-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/6/10.1063/1.3698303
10.1063/1.3698303
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