RHEED pattern of (a) InAs(100) substrate after in situ annealing, (b) 4.0 nm of epitaxial Fe on InAs(100), (c) Fe3O4 formed by annealing at 300 °C in an oxygen partial pressure. The electron beam was along InAs(100) direction, and the beam energy was set at 10.0 kV in the above diffraction.
(Color online) The FMR resonance field of different thicknesses of Fe3O4 films (a) tFe = 3 nm, (b) tFe = 4 nm, (c) tFe = 6 nm as a function of the in-plane field orientation with respect to InAs(100)[0-11] direction. The circles are the experimental data points, and the solid lines represent the theoretical fitted curves.
(Color online) The FMR resonance field of Fe3O4(tFe = 4 nm) film as a function of the out-of-plane field orientation with respect to the film normal. The circles are experimental data points, and the solid lines represent the theoretical fitted curves.
Values of the magnetic properties of our samples from fitting of the experimental data.
Article metrics loading...
Full text loading...