^{1}, Freda C. H. Lim

^{1}and M. G. Gavaza

^{1}

### Abstract

We study the effect of laser radiation on optical properties of semiconductors of industrial interest. The material is pumped with a laser of chosen central frequency, for which the absorption is maximal, thus inducing electron dynamics, which modifies the optical properties. By using an improved theoretical model, we study ultrafast dynamic changes in the refraction index and reflectivity corresponding to a wide frequency-interval of probing radiation and identify that interval where these optical changes are most significant.

I. INTRODUCTION

II. THEORETICAL METHOD

III. RESULTS

A. GaAs

B. Si

C. InSb

D. InP

IV. CONCLUSIONS

### Key Topics

- Optical properties
- 21.0
- III-V semiconductors
- 11.0
- Reflectivity
- 11.0
- Refractive index
- 11.0
- Semiconductors
- 10.0

## Figures

The band structure of GaAs.

The band structure of GaAs.

The electric susceptibility for GaAs (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

The electric susceptibility for GaAs (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

(GaAs) The refractive index (a) and reflectivity (b) for low-frequency incident radiation. The black curve (dashed): no laser; the red curve (continuous): after 133.4 fs of laser irradiation.

(GaAs) The refractive index (a) and reflectivity (b) for low-frequency incident radiation. The black curve (dashed): no laser; the red curve (continuous): after 133.4 fs of laser irradiation.

(GaAs) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

(GaAs) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

(GaAs) The time evolution or the refractive index (a) and reflectivity (b) for probe radiation with energy 1.53 eV (corresponding to approximately 800-nm wavelength).

(GaAs) The time evolution or the refractive index (a) and reflectivity (b) for probe radiation with energy 1.53 eV (corresponding to approximately 800-nm wavelength).

The band structure of Si.

The band structure of Si.

The electric susceptibility of Si (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

The electric susceptibility of Si (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

(Si) The refractive index (a) and the reflectivity (b) for low-frequency incident radiation. The black curve (dashed): no laser; the red curve (continuous): after 133.4 fs of laser irradiation.

(Si) The refractive index (a) and the reflectivity (b) for low-frequency incident radiation. The black curve (dashed): no laser; the red curve (continuous): after 133.4 fs of laser irradiation.

(Si) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

(Si) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

(Si) The time evolution or the refractive index (a) and reflectivity (b) for probe radiation with energy 1.56 eV (corresponding to approximately 800 nm wavelength).

(Si) The time evolution or the refractive index (a) and reflectivity (b) for probe radiation with energy 1.56 eV (corresponding to approximately 800 nm wavelength).

The band structure of InSb.

The band structure of InSb.

The electric susceptibility of InSb (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

The electric susceptibility of InSb (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

(InSb) The refractive index (a) and the reflectivity (b) for low-frequency incident radiation. The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation.

(InSb) The refractive index (a) and the reflectivity (b) for low-frequency incident radiation. The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation.

(InSb) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

(InSb) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

(InSb) The time evolution or the refractive index (a) and reflectivity (b) for probe radiation with energy 1.56 eV (corresponding to approximately 800-nm wavelength).

(InSb) The time evolution or the refractive index (a) and reflectivity (b) for probe radiation with energy 1.56 eV (corresponding to approximately 800-nm wavelength).

The band structure of InP.

The band structure of InP.

The electric susceptibility of InP (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

The electric susceptibility of InP (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

(InP) The refractive index (a) and the reflectivity (b) for low-frequency incident radiation. The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation.

(InP) The refractive index (a) and the reflectivity (b) for low-frequency incident radiation. The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation.

(InP) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

(InP) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

(InP) The time evolution of the refractive index (a) and reflectivity (b) for probe radiation with energy 1.56 eV (corresponding to approximately 800-nm wavelength).

(InP) The time evolution of the refractive index (a) and reflectivity (b) for probe radiation with energy 1.56 eV (corresponding to approximately 800-nm wavelength).

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