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Ultrafast laser-induced changes in optical properties of semiconductors
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10.1063/1.3698300
/content/aip/journal/jap/111/7/10.1063/1.3698300
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3698300
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The band structure of GaAs.

Image of FIG. 2.
FIG. 2.

The electric susceptibility for GaAs (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

Image of FIG. 3.
FIG. 3.

(GaAs) The refractive index (a) and reflectivity (b) for low-frequency incident radiation. The black curve (dashed): no laser; the red curve (continuous): after 133.4 fs of laser irradiation.

Image of FIG. 4.
FIG. 4.

(GaAs) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

Image of FIG. 5.
FIG. 5.

(GaAs) The time evolution or the refractive index (a) and reflectivity (b) for probe radiation with energy 1.53 eV (corresponding to approximately 800-nm wavelength).

Image of FIG. 6.
FIG. 6.

The band structure of Si.

Image of FIG. 7.
FIG. 7.

The electric susceptibility of Si (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

Image of FIG. 8.
FIG. 8.

(Si) The refractive index (a) and the reflectivity (b) for low-frequency incident radiation. The black curve (dashed): no laser; the red curve (continuous): after 133.4 fs of laser irradiation.

Image of FIG. 9.
FIG. 9.

(Si) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

Image of FIG. 10.
FIG. 10.

(Si) The time evolution or the refractive index (a) and reflectivity (b) for probe radiation with energy 1.56 eV (corresponding to approximately 800 nm wavelength).

Image of FIG. 11.
FIG. 11.

The band structure of InSb.

Image of FIG. 12.
FIG. 12.

The electric susceptibility of InSb (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

Image of FIG. 13.
FIG. 13.

(InSb) The refractive index (a) and the reflectivity (b) for low-frequency incident radiation. The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation.

Image of FIG. 14.
FIG. 14.

(InSb) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

Image of FIG. 15.
FIG. 15.

(InSb) The time evolution or the refractive index (a) and reflectivity (b) for probe radiation with energy 1.56 eV (corresponding to approximately 800-nm wavelength).

Image of FIG. 16.
FIG. 16.

The band structure of InP.

Image of FIG. 17.
FIG. 17.

The electric susceptibility of InP (normalized to the vacuum value). (a) The real part; (b) the imaginary part.

Image of FIG. 18.
FIG. 18.

(InP) The refractive index (a) and the reflectivity (b) for low-frequency incident radiation. The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation.

Image of FIG. 19.
FIG. 19.

(InP) The refractive index (a) and the reflectivity (b) for high-frequency incident radiation (probe). The black curve (circles): no laser; the red curve (squares): after 133.4 fs of laser irradiation (pump).

Image of FIG. 20.
FIG. 20.

(InP) The time evolution of the refractive index (a) and reflectivity (b) for probe radiation with energy 1.56 eV (corresponding to approximately 800-nm wavelength).

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/content/aip/journal/jap/111/7/10.1063/1.3698300
2012-04-02
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast laser-induced changes in optical properties of semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3698300
10.1063/1.3698300
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