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Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells
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10.1063/1.3699215
/content/aip/journal/jap/111/7/10.1063/1.3699215
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3699215
/content/aip/journal/jap/111/7/10.1063/1.3699215
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/content/aip/journal/jap/111/7/10.1063/1.3699215
2012-04-03
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3699215
10.1063/1.3699215
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