AFM image for the topmost surface for 10 layer-stacked InGaAs/GaAs QDs grown on GaAs (311)B. The inset shows 2D-FFT image.
PL spectra taken at 16 K for 10 layer-stacked InGaAs/GaAs QDs with (a) d SL = 10 nm, (b) 20 nm, and (c) 30 nm, respectively. (d) shows PL spectrum for single layer of InGaAs/GaAs QDs.
PL decay profiles for 10 layer-stacked InGaAs/GaAs QDs with d SL = 10 nm – 40 nm. The measurement temperature was 3.5 K.
PL decay times as a function of detection wavelength measured for 10 layer-stacked InGaAs/GaAs QDs with d SL = 10 nm – 40 nm.
EQE spectrum taken at the short-circuit condition for InGaAs/GaAs QDSC with GaAs spacer layers of 15 nm-thickness grown on GaAs (311)B.
Difference in EQE values, ΔEQE, with (EQEIR_on) and without (EQEIR_off) IR light illumination measured under (a) zero-bias, and (b) forward bias of 0.5 V, respectively.
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