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Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells
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10.1063/1.3700250
/content/aip/journal/jap/111/7/10.1063/1.3700250
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3700250
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional view of substrate sliced parallel to growth direction.

Image of FIG. 2.
FIG. 2.

EBIC image at crystalline defects in region I.

Image of FIG. 3.
FIG. 3.

(a) SEM image of precipitation in region I and atomic distributions of (b) Si, (c) C, and (d) N.

Image of FIG. 4.
FIG. 4.

(a) EBIC image at the precipitates observed in region III, (b) high resolution SEM image, and atomic distributions of (c) Si, (d) C, and (e) N.

Image of FIG. 5.
FIG. 5.

(a) EBIC image and (b) EBSD diagram at small-angle grain boundaries in region IV.

Image of FIG. 6.
FIG. 6.

(a) SEM image of precipitates at small-angle grain boundaries and atomic distributions of (b) Si, (c) C, and (d) N.

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/content/aip/journal/jap/111/7/10.1063/1.3700250
2012-04-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3700250
10.1063/1.3700250
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