Calculated C(V)/C geom curves for single-carrier devices with a thickness L = 100 nm, relative dielectric constant ɛ r = 3, at T = 300 K and in the low-frequency limit, for (a) symmetric devices with ideal injection at both interfaces, so that V bi = 0 V, and (b) asymmetric devices with ideal injection at one of the interfaces and a 2 eV injection barrier at the other interface, so that V bi = 2 V. Thick curves show the results for the case of a constant mobility and diffusion coefficient (“no disorder,” with peak heights indicated by horizontal dashed lines), and the thin curves show the results for transport within a spatially uncorrelated Gaussian density of states with a site density N t = 1 × 1027 m−3 and a width σ/(kBT) = 3 and 6.
Calculated effect on the disorder dependent peak voltage and peak height due to (a),(b) a variation of the layer thickness and (c),(d) a variation in the injection barrier, in all cases for devices studied in Fig. 1(b). The layer thickness and injection barrier are varied in 50 nm and 0.1 eV steps, respectively.
(a) The structure of the PF and TAA monomer units. (b) C(V) curves for PEDOT:PSS Pd devices, measured at room temperature at various frequencies (left-hand scale) and simulated in the low-frequency limit (right-hand scale). The structure of the PF and TAA monomer units is shown as an inset. The simulation was carried out using σ = 0.13 eV, N t = 0.6 × 1027 m−3, V bi = 1.95 eV, and ɛ r = 3.2.
(a) Calculated C(V)/C geom curves for double-carrier devices with based on a semiconductor with a gap energy E g = 2 eV, a thickness L = 100 nm, relative dielectric constant ɛ r = 3, at T = 300 K and in the low-frequency limit. The contacts are ideal, so that V bi = 2 V. (b) Calculated dependence of the peak voltage and the peak capacitance on the disorder parameter, for the devices studied in figure (a). (c) Calculated effect of a finite electron injection barrier on the C(V)/C geom curves for devices which are otherwise identical to those studied in (a).
(a) Energy-level structure for the PF-TAA devices studied, andC(V) curves measured at room temperature at various frequencies for (b) PEDOT:PSS Ba 96 nm PF-TAA(7.5%) Al devices.
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