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GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study
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10.1063/1.3701583
/content/aip/journal/jap/111/7/10.1063/1.3701583
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3701583

Figures

Image of FIG. 1.
FIG. 1.

Deposition process for 170 nm GaP growth on pseudomorphic 4° off-oriented Si0.8Ge0.2/Si(001), displaying substrate temperature (Tsub), Ga crucible temperature (TGa), Ga pulse program, and PH3 gas flow.

Image of FIG. 2.
FIG. 2.

Critical thickness hc vs lattice misfit as a function of N-content in GaP1−xNx (x = 0 – 0.02) systems.

Image of FIG. 3.
FIG. 3.

(a) Specular θ/2θ XRD scans of as-grown Si0.8Ge0.2/Si(001) samples and after annealing at 500 – 1000 °C in N2 atmosphere. Process pressure and annealing time were 1 atm and 30 min, respectively. (b) Specular θ/2θ XRD scan after 170 nm GaP deposition on top. (c) RSM of asymmetric () reflections of Si, GaP, and Si0.8Ge0.2 measured on the same sample. Qz-axis is parallel to (004) net plane normal and Qx-axis is perpendicular to Qz in the diffraction plane. (d) In-plane (220) XRD scan of the same sample.

Image of FIG. 4.
FIG. 4.

(a) Specular θ/2θ XRD scan of 170 nm GaP/20 nm Si0.8Ge0.2/Si(001) postannealed at 50 °C, 250 °C, 550 °C and cooled down back to 50 °C. Postannealing applied under N2 atmosphere at a pressure of 1 atm. For better comparison and depiction, all XRD graphs were aligned to the Si(004) reflection. (b) (001) lattice constants of GaP, Si0.8Ge0.2, and Si layers vs temperature.

Image of FIG. 5.
FIG. 5.

(a) XRD pole figure measurement adjusted on the GaP(111) reflection performed after postannealing of a 170 nm GaP/20 nm Si0.8Ge0.2/Si(001) sample at 550 °C for 15 min under 1 atm N2. (b) Sketch of microtwin formation in (001) oriented GaP layers. (c) XRD φ-scan on GaP(1 1 1) Bragg reflection at χ = 16°. (d) Schematic sketch of microtwin orientation with respect to 4° off-oriented substrates.

Image of FIG. 6.
FIG. 6.

Cross section TEM image (a) and AFM surface images (before and after GaP deposition) (b) of 170 nm GaP on pseudomorphic 4° off-oriented Si0.8Ge0.2/Si(001). High resolution TEM image of the interface region between Si0.8Ge0.2 and GaP layers (c), as well as close-up images of a well grown interface area (d) and an intrinsic stacking fault (open circles labeled with ABC show stacking order along the {1 1 1} direction) (e).

Image of FIG. 7.
FIG. 7.

Cross section dark field HRTEM image pair of APDs at the GaP/Si0.8Ge0.2 interface of the 170 nm GaP/20 nm Si0.8Ge0.2/Si(001) heterostructure taken by slightly tilted (0 0 2) (a) and (0 0 −2) (b) reflection.

Tables

Generic image for table
Table I.

Important physical parameters of Si, InP, and GaP (at 300 K) for SiGe HBT high frequency and power performance increase as well as heterostructure growth.a

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/content/aip/journal/jap/111/7/10.1063/1.3701583
2012-04-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3701583
10.1063/1.3701583
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