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Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials
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10.1063/1.3702440
/content/aip/journal/jap/111/7/10.1063/1.3702440
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3702440
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles of B and C with 25 keV, 1 × 1015 cm−2 C implantation and with 20 keV, 2 × 1014 cm−2 B implantation and annealing at 800 °C. Broken lines and symbols represent the profiles of as-implanted and after annealing, respectively.

Image of FIG. 2.
FIG. 2.

SIMS profiles of B and C with 25 keV, 1 × 1015 cm−2 C implantation and with 20 keV, 2 × 1014 cm−2 B implantation and annealing at 1000 °C. Broken lines and symbols represent the profiles of as-implanted and after annealing, respectively.

Image of FIG. 3.
FIG. 3.

SIMS profiles of B without C implantation and with 20 keV, 2 × 1014 cm−2 B implantation and annealing at 800 °C and 1000 °C. Broken lines and symbols represent the profiles of as-implanted and after annealing, respectively.

Image of FIG. 4.
FIG. 4.

Simulated and SIMS profiles of B and C with 25 keV, 1 × 1015 cm−2 C implantation and with 20 keV, 2 × 1014 cm−2 B implantation. Solid lines represent the simulation results. Broken lines and symbols represent the SIMS profiles of as-implanted and after annealing at 800 °C for 30 min, respectively.

Image of FIG. 5.
FIG. 5.

Simulated and SIMS profiles of B and C with 25 keV, 1 × 1015 cm−2 C implantation and with 20 keV, 2 × 1014 cm−2 B implantation. Solid lines represent the simulation results. Broken lines and symbols represent the SIMS profiles of as-implanted and after annealing at 1000 °C, respectively.

Image of FIG. 6.
FIG. 6.

Simulated and SIMS profiles of B and C with 25 keV, 2 × 1014 cm−2 C implantation and with 20 keV, 2 × 1014 cm−2 B implantation. Solid lines represent the simulation results. Broken lines and symbols represent the SIMS profiles of as-implanted and after annealing at 800 °C for 30 min, respectively.

Image of FIG. 7.
FIG. 7.

Simulated and SIMS profiles of B and C with 25 keV, 2 × 1014 cm−2 C implantation and with 20 keV, 2 × 1014 cm−2 B implantation. Solid lines represent the simulation results. Broken lines and symbols represent the SIMS profiles of as-implanted and after annealing at 1000 °C, respectively.

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/content/aip/journal/jap/111/7/10.1063/1.3702440
2012-04-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3702440
10.1063/1.3702440
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