A schematic diagram of the sample structure.
Experimentally measured magnetic field dependence of and at 300 K (○) and 7 K (□) that have been fitted with Eq. (15) (solid curve) for and Eq. (16) (dashed curve) for shown in Ref. 7.
Mobility spectra of Si/SiGe heterostructures at (a) 300 K and (b) 7 K.
Temperature dependence of 2DEG density (•), parallel electron density (▴), and averaged density (□) obtained by the mobility spectrum analysis and Hall density (×) obtained by Hall effect measurements.
Temperature dependence of 2DEG mobility (•), parallel electron mobility (▴), and averaged mobility (□) obtained by the mobility spectrum analysis and Hall mobility (×) obtained by Hall effect measurements.
Mobility spectra of 2DEG with different back-gate bias voltages indicated in the figures.
2DEG density (•) dependence of mobility with a variety of back gate voltages at . A fit to 2DEG mobility yields power dependence .
Temperature dependence of 2DEG mobility (•) obtained by mobility spectrum analysis. Theoretical curve is shown for the total mobility including three scattering mechanisms, the intravalley scattering, intervalley scattering, and remote ionized impurities scattering. The theoretical mobility limited by each of the scattering mechanisms is also shown.
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