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Experimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well
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10.1063/1.3702464
/content/aip/journal/jap/111/7/10.1063/1.3702464
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3702464
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A schematic diagram of the sample structure.

Image of FIG. 2.
FIG. 2.

Experimentally measured magnetic field dependence of and at 300 K (○) and 7 K (□) that have been fitted with Eq. (15) (solid curve) for and Eq. (16) (dashed curve) for shown in Ref. 7.

Image of FIG. 3.
FIG. 3.

Mobility spectra of Si/SiGe heterostructures at (a) 300 K and (b) 7 K.

Image of FIG. 4.
FIG. 4.

Temperature dependence of 2DEG density (•), parallel electron density (▴), and averaged density (□) obtained by the mobility spectrum analysis and Hall density (×) obtained by Hall effect measurements.

Image of FIG. 5.
FIG. 5.

Temperature dependence of 2DEG mobility (•), parallel electron mobility (▴), and averaged mobility (□) obtained by the mobility spectrum analysis and Hall mobility (×) obtained by Hall effect measurements.

Image of FIG. 6.
FIG. 6.

Mobility spectra of 2DEG with different back-gate bias voltages indicated in the figures.

Image of FIG. 7.
FIG. 7.

2DEG density (•) dependence of mobility with a variety of back gate voltages at . A fit to 2DEG mobility yields power dependence .

Image of FIG. 8.
FIG. 8.

Temperature dependence of 2DEG mobility (•) obtained by mobility spectrum analysis. Theoretical curve is shown for the total mobility including three scattering mechanisms, the intravalley scattering, intervalley scattering, and remote ionized impurities scattering. The theoretical mobility limited by each of the scattering mechanisms is also shown.

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/content/aip/journal/jap/111/7/10.1063/1.3702464
2012-04-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3702464
10.1063/1.3702464
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