(a) Dark current density vs applied bias of unpassivated and Al2O3 passivated 400 μm single pixel square diodes measured at 77 K. (b) Zero bias differential resistance vs applied bias voltage characteristics for the unpassivated and Al2O3 passivated samples at 77 K. Dashed line represents Al2O3 passivated device and solid line represents unpassivated device.
Spectral response of the unpassivated and Al2O3 passivated photodetectors at 77 K. The cut-off wavelength of the Al2O3 passivated and unpassivated photodetectors is ∼5.1 μm. Dashed line represents Al2O3 passivated device and solid line represents unpassivated device.
Responsivity and detectivity of Al2O3 passivated, 400 × 400 μm single pixel test detectors at 77 K and 4 μm. The zero bias responsivity and the peak value of detectivity, D* of Al2O3 passivated photodetector was equal to 1.33 A/W and 1.9 × 1013 Jones, respectively.
Temperature dependent dark current measurements of Al2O3 passivated and unpassivated photodetectors at −0.1 V bias.
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