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Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors
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10.1063/1.3702567
/content/aip/journal/jap/111/7/10.1063/1.3702567
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3702567
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Dark current density vs applied bias of unpassivated and Al2O3 passivated 400 μm single pixel square diodes measured at 77 K. (b) Zero bias differential resistance vs applied bias voltage characteristics for the unpassivated and Al2O3 passivated samples at 77 K. Dashed line represents Al2O3 passivated device and solid line represents unpassivated device.

Image of FIG. 2.
FIG. 2.

Spectral response of the unpassivated and Al2O3 passivated photodetectors at 77 K. The cut-off wavelength of the Al2O3 passivated and unpassivated photodetectors is ∼5.1 μm. Dashed line represents Al2O3 passivated device and solid line represents unpassivated device.

Image of FIG. 3.
FIG. 3.

Responsivity and detectivity of Al2O3 passivated, 400 × 400 μm single pixel test detectors at 77 K and 4 μm. The zero bias responsivity and the peak value of detectivity, D* of Al2O3 passivated photodetector was equal to 1.33 A/W and 1.9 × 1013 Jones, respectively.

Image of FIG. 4.
FIG. 4.

Temperature dependent dark current measurements of Al2O3 passivated and unpassivated photodetectors at −0.1 V bias.

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/content/aip/journal/jap/111/7/10.1063/1.3702567
2012-04-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3702567
10.1063/1.3702567
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