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Microwave-induced transformation of rice husks to SiC
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View: Figures


Image of FIG. 1.
FIG. 1.

XRD scan of rice husk treated at 1900 °C in air showing the cristabolite phase of SiO2.

Image of FIG. 2.
FIG. 2.

XRD scan of rice husk treated at 1900 °C in vacuum showing the β-SiC phase.

Image of FIG. 3.
FIG. 3.

TEM micrograph of SiC samples obtained after microwave processing them at 1900 °C in vacuum. SiC powder particles get sintered to one another. Their sizes vary between 100 and 300 nm in diameter.

Image of FIG. 4.
FIG. 4.

(a) Particle showing stacking faults. (b) The corresponding diffraction pattern in the [011] zone. (c) Diffraction pattern from another particle showing twined spots close to [110] zone.

Image of FIG. 5.
FIG. 5.

Raman scattering data of microwave processed rice husk sample at 1900 °C in vacuum showing the TO and LO lines of β-SiC and D and G lines of graphitic-like material.

Image of FIG. 6.
FIG. 6.

(a) FTIR reflection spectra collected from two different regions within the sample, and (b) zoomed in view of the spectra within 650–1250 cm−1 spectral range.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microwave-induced transformation of rice husks to SiC