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Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
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10.1063/1.3702776
/content/aip/journal/jap/111/7/10.1063/1.3702776
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3702776

Figures

Image of FIG. 1.
FIG. 1.

The concentration of different elements (Si, O, and Ge) in function of the depth for multilayers samples with different thicknesses.

Image of FIG. 2.
FIG. 2.

The depth profile obtained from the XPS analyses in multilayer sample A. The signals due to Si, Ge, GeO, and the respective binding energies are presented.

Image of FIG. 3.
FIG. 3.

(a) Low Mag HAADF image of sample D. (b) HAADF image for sample D. The green rectangle shows the specific area studied by EELS. Gray scale Si-L2,3 map (c) and O-Kmap (d) produced after background subtraction using a power law fit.

Image of FIG. 4.
FIG. 4.

GISAXS maps of multilayer samples deposited under different conditions.

Image of FIG. 5.
FIG. 5.

Dependence of quantum dots lattice parameters (a), QD radius (b), and QD disorder (c) on the Ge + SiO2 layer thickness.

Image of FIG. 6.
FIG. 6.

STEM images of films (a) A and (b) D.

Tables

Generic image for table
Table I.

Layer thickness of the multilayers, controlled by the deposition time, determinate by RBS measurements. Dot parameters found from GISAXS analysis.

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/content/aip/journal/jap/111/7/10.1063/1.3702776
2012-04-11
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3702776
10.1063/1.3702776
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