The concentration of different elements (Si, O, and Ge) in function of the depth for multilayers samples with different thicknesses.
The depth profile obtained from the XPS analyses in multilayer sample A. The signals due to Si, Ge, GeO, and the respective binding energies are presented.
(a) Low Mag HAADF image of sample D. (b) HAADF image for sample D. The green rectangle shows the specific area studied by EELS. Gray scale Si-L2,3 map (c) and O-Kmap (d) produced after background subtraction using a power law fit.
GISAXS maps of multilayer samples deposited under different conditions.
Dependence of quantum dots lattice parameters (a), QD radius (b), and QD disorder (c) on the Ge + SiO2 layer thickness.
STEM images of films (a) A and (b) D.
Layer thickness of the multilayers, controlled by the deposition time, determinate by RBS measurements. Dot parameters found from GISAXS analysis.
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