(a) Capacitance–voltage characteristics measured at 300 K under AC bias at f = 1 MHz (data are offset vertically by 0.03 μF/cm2 for clarity), and (b) majority carrier distribution of the Schottky diode samples.
(a) Temperature-dependent conductance of QD, QW, and GaAs control samples measured at V = 1.4 V and f = 1 MHz, (b) temperature-dependent conductance of the QD sample at f = 1 MHz and varying bias, and (c) band diagram under reverse bias at 0.8 V (left) and at 2.0 V (right).
(a) Arrhenius plots constructed from peak conductance to extract activation energy and thermal capture cross section, and (b) activation energy extracted from Arrhenius plots and obtained by substracting Coulomb charging energy.
Optical (red) and thermal (blue) emission rates of holes in GaSb/GaAs QDs under different solar concentration.
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