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Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion
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10.1063/1.3703467
/content/aip/journal/jap/111/7/10.1063/1.3703467
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3703467
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Capacitance–voltage characteristics measured at 300 K under AC bias at f = 1 MHz (data are offset vertically by 0.03 μF/cm2 for clarity), and (b) majority carrier distribution of the Schottky diode samples.

Image of FIG. 2.
FIG. 2.

(a) Temperature-dependent conductance of QD, QW, and GaAs control samples measured at V = 1.4 V and f = 1 MHz, (b) temperature-dependent conductance of the QD sample at f = 1 MHz and varying bias, and (c) band diagram under reverse bias at 0.8 V (left) and at 2.0 V (right).

Image of FIG. 3.
FIG. 3.

(a) Arrhenius plots constructed from peak conductance to extract activation energy and thermal capture cross section, and (b) activation energy extracted from Arrhenius plots and obtained by substracting Coulomb charging energy.

Image of FIG. 4.
FIG. 4.

Optical (red) and thermal (blue) emission rates of holes in GaSb/GaAs QDs under different solar concentration.

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/content/aip/journal/jap/111/7/10.1063/1.3703467
2012-04-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/7/10.1063/1.3703467
10.1063/1.3703467
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