Inverse magnetic susceptibility of p-type Hg0.8Mn0.2Te in a range of 2–300 K, divided into paramagnetic (T > 50 K), paramagnetic enhancement (5–50 K), and spin-glass (T ≤ 5 K) regions. At high temperatures, the χ −1–T curve is fitted to the modified Brillouin function with T 0 = 120 K (red dashed line). Insert: magnetization curves at temperatures of 2, 4, and 10 K. Straight dashed lines are the extension near zero magnetic field for 2 and 10 K.
Negative magnetoresistance (MR) and binding energy () of acceptor-BMPs in p-type Hg0.8Mn0.2Te single crystal. (a) Typical Hall data at 20 K, (b) temperature-dependent negative MR strength at a magnetic field of 1.4 T, and (c) the relation between hole concentration and temperature. is nearly a constant of 24.6 meV and decreases at low temperatures of T < 40 K.
(a) Zero-field ln(ρxx ) vs T −1 of p-type Hg1− x Mn x Te single crystals with different Mn composition and excess acceptor concentration (NA − ND ). (b) μ hole vs T of the same samples.
(a) Typical MIR absorption spectra of p-type Hg0.8Mn0.2Te in a temperature range of 15–300 K, together with the total fittings by classical oscillator model and Drude model in black dashed lines, and (b) resonant energy (hω 0) and (c) normalized intensity of peak A as functions of temperature.
(a) Dispersion of acceptor-BMPs in p-type Hg0.8Mn0.2Te for zero (dashed) and finite (line) damping by classical oscillator model. (b) Comparison of the fittings with classical oscillator model (dashed) and quantum defect method (dashed-dotted line) at 15 K. (c) and (d) Experiment data (solid lines) and fittings with the classical oscillator model for the absorption of photoionization (black dashed-dotted), free holes (black dots), lattice scattering (black dashed-dotted), and the sum (red dashes) at 150 and 270 K.
(a) Photoionization absorption of acceptor-BMPs in Hg0.78Mn0.22Te. (b) and (c) Temperature behaviors of resonant energy (hω 0) and peak intensity (peak A), respectively.
Spin splitting of acceptor-BMP level caused by magnetic polarization. (a) Evolutions of binding energy (Ea ) and PIA with temperature in p-type Hg1− x Mn x Te. (b) Formation of acceptor-BMP. At low temperatures, the acceptor-BMP level shows spin splitting.
Numerical results of RA , εp , , , , and of acceptor-BMP in p-type Hg0.8Mn0.2Te single crystal at zero magnetic field in a temperature range of 10–300 K.
(a) Numerical results of , , and of acceptor-BMPs in p-type Hg1− x Mn x Te (0.12 ≤ x ≤ 0.26) single crystals in the range of 10-300 K at zero magnetic field. (b) Binding energy of acceptor-BMPs () given by the Hall experiment (black circle) and DS model (red square), respectively, in p-type Hg1− x Mn x Te at 300 K and zero magnetic field.
Parameters in fitting of acceptor-BMP photoionization absorption. p Hall is by Hall measurement.
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