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Photoionization absorption and zero-field spin splitting of acceptor-bound magnetic polaron in p-type Hg1- x Mn x Te single crystals
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Image of FIG. 1.
FIG. 1.

Inverse magnetic susceptibility of p-type Hg0.8Mn0.2Te in a range of 2–300 K, divided into paramagnetic (T > 50 K), paramagnetic enhancement (5–50 K), and spin-glass (T ≤ 5 K) regions. At high temperatures, the χ −1T curve is fitted to the modified Brillouin function with T 0 = 120 K (red dashed line). Insert: magnetization curves at temperatures of 2, 4, and 10 K. Straight dashed lines are the extension near zero magnetic field for 2 and 10 K.

Image of FIG. 2.
FIG. 2.

Negative magnetoresistance (MR) and binding energy () of acceptor-BMPs in p-type Hg0.8Mn0.2Te single crystal. (a) Typical Hall data at 20 K, (b) temperature-dependent negative MR strength at a magnetic field of 1.4 T, and (c) the relation between hole concentration and temperature. is nearly a constant of 24.6 meV and decreases at low temperatures of T < 40 K.

Image of FIG. 3.
FIG. 3.

(a) Zero-field ln(ρxx ) vs T −1 of p-type Hg1− x Mn x Te single crystals with different Mn composition and excess acceptor concentration (NA  − ND ). (b) μ hole vs T of the same samples.

Image of FIG. 4.
FIG. 4.

(a) Typical MIR absorption spectra of p-type Hg0.8Mn0.2Te in a temperature range of 15–300 K, together with the total fittings by classical oscillator model and Drude model in black dashed lines, and (b) resonant energy ( 0) and (c) normalized intensity of peak A as functions of temperature.

Image of FIG. 5.
FIG. 5.

(a) Dispersion of acceptor-BMPs in p-type Hg0.8Mn0.2Te for zero (dashed) and finite (line) damping by classical oscillator model. (b) Comparison of the fittings with classical oscillator model (dashed) and quantum defect method (dashed-dotted line) at 15 K. (c) and (d) Experiment data (solid lines) and fittings with the classical oscillator model for the absorption of photoionization (black dashed-dotted), free holes (black dots), lattice scattering (black dashed-dotted), and the sum (red dashes) at 150 and 270 K.

Image of FIG. 6.
FIG. 6.

(a) Photoionization absorption of acceptor-BMPs in Hg0.78Mn0.22Te. (b) and (c) Temperature behaviors of resonant energy ( 0) and peak intensity (peak A), respectively.

Image of FIG. 7.
FIG. 7.

Spin splitting of acceptor-BMP level caused by magnetic polarization. (a) Evolutions of binding energy (Ea ) and PIA with temperature in p-type Hg1− x Mn x Te. (b) Formation of acceptor-BMP. At low temperatures, the acceptor-BMP level shows spin splitting.

Image of FIG. 8.
FIG. 8.

Numerical results of RA , εp , , , , and of acceptor-BMP in p-type Hg0.8Mn0.2Te single crystal at zero magnetic field in a temperature range of 10–300 K.

Image of FIG. 9.
FIG. 9.

(a) Numerical results of , , and of acceptor-BMPs in p-type Hg1− x Mn x Te (0.12 ≤ x ≤ 0.26) single crystals in the range of 10-300 K at zero magnetic field. (b) Binding energy of acceptor-BMPs () given by the Hall experiment (black circle) and DS model (red square), respectively, in p-type Hg1− x Mn x Te at 300 K and zero magnetic field.


Generic image for table
Table I.

Parameters in fitting of acceptor-BMP photoionization absorption. p Hall is by Hall measurement.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoionization absorption and zero-field spin splitting of acceptor-bound magnetic polaron in p-type Hg1-xMnxTe single crystals