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A scattering model for nano-textured interfaces and its application in opto-electrical simulations of thin-film silicon solar cells
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10.1063/1.4704372
/content/aip/journal/jap/111/8/10.1063/1.4704372
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/8/10.1063/1.4704372

Figures

Image of FIG. 1.
FIG. 1.

Illustrating thin-film silicon solar cells with flat interfaces (a) and with nano-textured interfaces (b) in p-i-n configuration. (Layer thicknesses not in scale.)

Image of FIG. 2.
FIG. 2.

Illustrating the flat k-space on which lives and the hemisphere, on which the AID is defined.

Image of FIG. 3.
FIG. 3.

Simulated and measured AID in transmission (a) and reflection (b) for four TCO-air interfaces with different morphologies at 600 nm. The measurement deviations are determined according to Ref. 22.

Image of FIG. 4.
FIG. 4.

Simulated and measured haze in reflection in transmission (a) and reflection (b) for four TCO-air interfaces with different morphologies.

Image of FIG. 5.
FIG. 5.

Simulated and measured angular intensity distribution in reflection for three different ZnO:Al-material interfaces. The measurement deviations are determined according to Ref. 22.

Image of FIG. 6.
FIG. 6.

Illustrating thin-film silicon solar cells as they were deposited for this contribution. The layer thickness is denoted by d. (Layer thicknesses not in scale.)

Image of FIG. 7.
FIG. 7.

Atomic force microscopy scans of ZnO:Al etched in HCl of 0.5% mass fraction (top) and of the back of p-i-n structures deposited on the ZnO:Al (bottom). The etch times were 15 s (a), 30 s (b), and 45 s (c). The scans consist of 256 × 256 points and are 5 × 5 μm2 large.

Image of FIG. 8.
FIG. 8.

The RMS roughness and correlation length of the etched ZnO:Al layers onto that the solar cells were deposited.

Image of FIG. 9.
FIG. 9.

The external parameters of the deposited solar cells in dependence of the RMS roughness of their front TCO layers. The parameters were measured with a Pasan IIc sun simulator/solar tester setup and averaged on the best 10 cells of stripes with 30 cells. The solar cell area was 0.16 cm2.

Image of FIG. 10.
FIG. 10.

The results of the simulations with asa for the cell with flat interfaces (a), with nm (b) and with nm (c). The large figures show the EQE while the insets show the J–V characteristics. The red full lines in (b) and (c) show results of simulations where the accurate morphology of the Si-metal interface was used. For the simulations represented by the blue dashed lines, it was assumed that the Si-metal interface has the same morphology as the TCO-Si interface.

Tables

Generic image for table
Table I.

The morphology, rms roughness and correlation length of the used TCO samples as obtained from AFM scans of 256 × 256 points over 20 × 20 μm2. The values in brackets show values obtained from 5 × 5 μm2 scans.

Generic image for table
Table II.

The external parameters of the deposited solar cells in dependence of the RMS roughness of their front TCO layers. The parameters were measured with a Pasan IIc sun simulator/solar tester setup and averaged on the best 10 cells of stripes with 30 cells. The solar cell area was 0.16 cm2.

Generic image for table
Table III.

The used layers and their thicknesses for the asa simulations. The first row characterizes the three simulated cells by their TCO morphology. All values are in nm.

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/content/aip/journal/jap/111/8/10.1063/1.4704372
2012-04-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A scattering model for nano-textured interfaces and its application in opto-electrical simulations of thin-film silicon solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/8/10.1063/1.4704372
10.1063/1.4704372
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