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Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress
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10.1063/1.4704393
/content/aip/journal/jap/111/8/10.1063/1.4704393
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/8/10.1063/1.4704393
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Device patterns: (a) 2DEG-sensing-bar structure and (b) Dual-gate structure.

Image of FIG. 2.
FIG. 2.

Measurement configurations of (a) partial resistances R1 , R2, and R3 and (b) on-stress condition

Image of FIG. 3.
FIG. 3.

Output characteristics of the devices with and without 2DEG-sensing bars.

Image of FIG. 4.
FIG. 4.

On-stress-induced resistance variations at the center (R2 ) and drain edge (R3 ) of the drain access region with (a) SiNX and (b) Al2O3 passivation.

Image of FIG. 5.
FIG. 5.

Surface leakage current observed using a dual-gate structure for the devices with and without 10 nm of Al2O3 passivation.

Image of FIG. 6.
FIG. 6.

Simulated horizontal electric field in the channel as a function of horizontal position.

Image of FIG. 7.
FIG. 7.

(a) Measurement method for confirming the hot electron effect and (b) transfer characteristics of G2 before and after applying on-stress to G1.

Image of FIG. 8.
FIG. 8.

On-stress-induced resistance variations at the center of (a) drain access and (b) source access regions.

Image of FIG. 9.
FIG. 9.

Effect of monochromatic irradiation on the on-stress-induced resistance variation at the center of the drain access region.

Image of FIG. 10.
FIG. 10.

Ratio of on-stress-induced variation of 2DEG density (Δns ) to drain current as a function of reciprocal of electric field at the center of the drain access region.

Image of FIG. 11.
FIG. 11.

(a) On-stress-induced charge injection at the gate edge (R1 ) for the device without passivation and (b) suppression of charge injection at the gate edge with a 10 nm Al2O3 passivation film.

Image of FIG. 12.
FIG. 12.

Overall picture of the on-stress-induced trapping effects in AlGaN/GaN HFETs.

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/content/aip/journal/jap/111/8/10.1063/1.4704393
2012-04-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/8/10.1063/1.4704393
10.1063/1.4704393
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