Device patterns: (a) 2DEG-sensing-bar structure and (b) Dual-gate structure.
Measurement configurations of (a) partial resistances R1 , R2, and R3 and (b) on-stress condition
Output characteristics of the devices with and without 2DEG-sensing bars.
On-stress-induced resistance variations at the center (R2 ) and drain edge (R3 ) of the drain access region with (a) SiNX and (b) Al2O3 passivation.
Surface leakage current observed using a dual-gate structure for the devices with and without 10 nm of Al2O3 passivation.
Simulated horizontal electric field in the channel as a function of horizontal position.
(a) Measurement method for confirming the hot electron effect and (b) transfer characteristics of G2 before and after applying on-stress to G1.
On-stress-induced resistance variations at the center of (a) drain access and (b) source access regions.
Effect of monochromatic irradiation on the on-stress-induced resistance variation at the center of the drain access region.
Ratio of on-stress-induced variation of 2DEG density (Δns ) to drain current as a function of reciprocal of electric field at the center of the drain access region.
(a) On-stress-induced charge injection at the gate edge (R1 ) for the device without passivation and (b) suppression of charge injection at the gate edge with a 10 nm Al2O3 passivation film.
Overall picture of the on-stress-induced trapping effects in AlGaN/GaN HFETs.
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