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Thermophysical and electrical properties of Al-doped ZnO films
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10.1063/1.4706572
/content/aip/journal/jap/111/9/10.1063/1.4706572
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/9/10.1063/1.4706572

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of AZO films deposited under 1% H2 GFR [H2/(Ar + H2)]. The halo pattern observed around 2θ = 20°–25° was from the glass substrate.

Image of FIG. 2.
FIG. 2.

Electrical resistivity, Hall mobility, and carrier density of AZO films as a function of O2 or H2 GFR during deposition.

Image of FIG. 3.
FIG. 3.

Electrical resistivity, Hall mobility, and carrier density measured in the ambient atmosphere of 100–300 K for the AZO film deposited under 1% H2 GFR.

Image of FIG. 4.
FIG. 4.

Transmittance and reflectance from 190 to 2500 nm for AZO films deposited under 1% and 5% H2 GFRs and 0.5% O2 GFR.

Image of FIG. 5.
FIG. 5.

Thermoreflectance signals of Mo/AZO/Mo three-layered films deposited under 0.5% O2 GFR and 1% H2 GFR.

Image of FIG. 6.
FIG. 6.

Thermal diffusivity and electrical resistivity of AZO films deposited as a function of H2 or O2 GFR during deposition.

Image of FIG. 7.
FIG. 7.

Thermal conductivity against electrical conductivity for AZO films (black square) deposited under various O2 or H2 GFRs. Thermal conductivity calculated using the Wiedemann–Franz law is shown by a solid line. For comparison, thermal conductivity of polycrystalline ITO (filled circle) (Ref.12), amorphous ITO (empty circle), and amorphous IZO films (empty triangle) (Ref. 13) is also plotted.

Image of FIG. 8.
FIG. 8.

Indentation depth–load hysteresis curve for AZO films deposited under 1% H2 GFR, obtained by the nanoindentation measurement. This was measured three times in this study.

Tables

Generic image for table
Table I.

Thermal conductivity, electrical conductivity, and thermal conductivity carried by free electrons and phonons for AZO films.

Generic image for table
Table II.

Atomic mass ratio of metal and oxygen and lattice structure for AZO, ITO, and IZO.

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/content/aip/journal/jap/111/9/10.1063/1.4706572
2012-05-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermophysical and electrical properties of Al-doped ZnO films
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/9/10.1063/1.4706572
10.1063/1.4706572
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