(a) DLTS spectrum of the defects detected in ICP Ar etched n-GaAs. The inset shows the same sample (from 20 K to 35 K) following MeV electron irradiation using a Sr90 source. Evidently Ar ICP etching introduced a defect unrelated to the well documented E1. (b) DLTS Arrhenius plots of the defects pertinent to this study.
Emission rate dependence on the applied electric field for the electron trap (a) E1′ and (b) M3′, respectively, as determined from LDLTS measurements using the double pulse technique (difference DLTS). The applied reverse bias ranged between 1 V and 4 V.
The linear dependence of the logarithm of the emission rate for (a) trap E1′ and (b) trap M3′ on the square of the electric field for five different temperatures. The solid lines correspond to a fit of from which the characteristic field and consequently the tunnelling time, τ2 were determined.
Temperature dependence of the characteristic tunnelling time () for (a) E1′ and (b) M3′. The symbols represent the experimentally obtained values and the solid lines a fit to these for the purpose of extracting . The star represents a data point, omitted in the fit (solid line).
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