Full text loading...
The transport characteristics of MTJs with (a) 2 nm thick and (b) 3 nm thick free layer at V read = 5 mV.
The cross sectional images of Type (2-b) (a) and Type (2-d) by HRTEM after annealing at 320 °C. Above the MgO(001), Type (2-b) exhibits a clear bcc structure. However, Type (2-d) appears to be partially crystallized (yellow dash).
The voltage versus resistance curves of Type (1-c) (a) and Type (2-b) (b). The H off indicates the offset field to obtain the switching regime. The junction size is 80 × 160 nm2. The voltage sweep rate = 0.005 (Vstep)/0.005 (s) = 1 (V/s) with no interval.
The temperature dependence of (a) the switching field of Type (2-b) with four different read voltages and (b) the coercivity; H c = |H (P to AP) – H (AP to P)|/2.
Design scheme of the MTJs with various free layer structures, and the measured magnetotransport values from Fig. 1.
Article metrics loading...