(a) Deposition rates and (b) Discharge voltage for different γrfdc from 0 to 1 and various PTot of 60, 80, 100, and 120 W, respectively. By varying γrfdc, similar deposition rate can be achieved at varying PTot.
(a) XRD peaks for GZO films grown at PTot = 100 W with various γrfdc showing (002) peak characteristic of c-axis oriented zinc oxide with wurtzite structure and inset showing 2D diffraction image. No Ga2O3 peaks are evident (b) ZnO PDF. (c) Ga2O3 PDF.
(a) χ for PTot of 100 W at various γrfdc. (b) FWHM on χ for PTot of 100 W and 120 W at various γrfdc. Films grown with more RF component have small FWHM.
Hall data for various PTot and at varying γrfdc. Panels a, b, and c, respectively, show σ, N, and μ. Films grown with 50% or higher RF power portion have high μ.
a) Total counts/thickness of the entire 002 peak, (b) σ vs FWHM χ, (c) μ vs FWHM χ for films grown at PTot of 100 W and 120 W at various γrfdc. Films with more structural order obtained with increased RF component, resulting in high σ and μ.
Transmittance and Reflectance data for PTot = 100 W. Films have ∼90% transparency in visible spectrum. The insert shows (αhν)2 vs hν and Eopt (±0.02 eV).
AFM image for PTot = 100 W: (a) γrfdc = 0 with Srms = 2.2 nm (b) γrfdc = 0.5 with Srms = 1.7 nm (c) γrfdc = 1 with Srms = 1.8 nm. Films grown with 50% or higher RF power portion have low Srms.
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