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Effect of Si-induced defects on 1 µm absorption losses in laser-grade YAG ceramics
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Image of FIG. 1.
FIG. 1.

(a) Two-dimensional absorption coefficient mapping profile (3 × 3.5 mm) of one YAG ceramic sample with a 100 µm spatial resolution before annealing. (b) The absorption coefficient variation from position A to B with steepest gradient in (a) is fitted with error function. The fitted diffusion length is 2.2 mm corresponding to the combined grain boundary and bulk diffusivity of oxygen in the order of 10−7 cm2/s.24

Image of FIG. 2.
FIG. 2.

Absorption coefficient of non-doped YAG (left halves) and Nd-doped YAG (right halves) ceramics and single crystals at 1064 nm. Closed diamonds, open dots, and open triangles represent single crystals (SC), non-reactively sintered ceramics (CNRS), and reactively sintered ceramics (CRS), respectively.

Image of FIG. 3.
FIG. 3.

In-line transmittance measurement from 1.2 to 3.1 eV (1 µm to 400 nm) of a ceramic sample. Blue and red lines represent measured and fitted spectra, respectively. The equally spaced bands 1.5 eV, 2.1 eV, and 2.7 eV are fitted using a bound polaron model.

Image of FIG. 4.
FIG. 4.

Dependence of 1 µm absorption coefficient of different YAG samples on their Si impurity concentration for (1) Ca concentration [Ca] < 0.5 wt. ppm and (2) [Ca] = 240 wt. ppm. The dashed line is added for visualization purposes.


Generic image for table
Table I.

The measured concentration range (in wt. ppm) of impurities in YAG samples, in a descending order of their impurity concentrations.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Si-induced defects on 1 µm absorption losses in laser-grade YAG ceramics