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Key capacitive parameters for designing single-electron transistor charge sensors
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10.1063/1.4711094
/content/aip/journal/jap/111/9/10.1063/1.4711094
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/9/10.1063/1.4711094
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscopy image of the device and with the measurement setup indicated. (b) Schematic cross section of the device structure along the line XY in (a). (c) and (d) Stability diagrams for QD1 and QD2, respectively. (c) VSG 1 = 0 V and VSG 2 = −4 V, (d) VSG 1 = 0 V and VSG 2 = −4 V. From the observed Coulomb diamonds, a charging energy of EQD 1 ≈ 14.0 meV for QD1 and E QD 2 ≈ 6.2 meV for QD2 was obtained.

Image of FIG. 2.
FIG. 2.

Plots of (a) I QD 1 and (b) I QD 2 as functions of V TG and V SG 1. VD 1 = 1 mV, VD 2 = 1 mV, and VSG 2 = −4 V. The two red dashed lines in (b) show the positions of two Coulomb peaks in (a). Inset: Higher magnification view of a shift of a Coulomb peak. The solid white lines are visual guides.

Image of FIG. 3.
FIG. 3.

(a) Schematic diagram of QD1 and QD2 and various electrical parameters. (b) Schematic diagram of twin QDs for numerical calculations. (c) Calculation results for k QD 1 and k QD 2 as a function of L QD 2 (in units of L QD 1) using the three-dimensional Poisson equation. L QD 1and the distance d between the edges of QD1 and QD2 are fixed. (d) Calculated Em/Em0 as a function of LQD 2 (in units of L QD 1) by the same method as for panel (c). Em 0 is the value of Em when LQD 2 = LQD 1 and d = LQD 1. In panels (c) and (d), the calculation results are shown for d = LQD 1 and d = 0.5LQD 1.

Image of FIG. 4.
FIG. 4.

(a) Plots of I QD 2 as a function of V TG and V SG 1 for another device. VD 1 = 1 mV, VD 2 = 5 mV, and VSG 2 = −5.8 V. (b) Schematic diagram of RF measurement setup. (c) Numerical calculation results for the SNR as a function of LQD 2 (in units of L QD 1) for optimized gate bias conditions. Using y-axis value Y = 10SNR/20 e(R Δf / ESET 0)1/2 in (c), the SNR can be expressed as SNR = 20Log10[Y/{e(R Δf / ESET 0)1/2}]. Here, RL  = RR  = R, k B T = 0.01ESET 0 (ESET 0 is the charging energy of QD2 when LQD 2 = LQD 1 and d = LQD 1), A = 0.2ESET 0/e, V 0 = 0, and L QD 1 is fixed. Calculations were performed forCL /CQD 2 = 0.1, 0.2, and 0.3. Calculation results for d = LQD 1 and d = 0.5LQD 1 are shown.

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/content/aip/journal/jap/111/9/10.1063/1.4711094
2012-05-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Key capacitive parameters for designing single-electron transistor charge sensors
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/9/10.1063/1.4711094
10.1063/1.4711094
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