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Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites
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10.1063/1.4711095
/content/aip/journal/jap/111/9/10.1063/1.4711095
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/9/10.1063/1.4711095
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Figures

Image of FIG. 1.
FIG. 1.

(a) Randomly distributed TbAs nanoparticles of ∼1 nm in diameter were found in 0.8 at. % TbAs:InGaAs with HAADF STEM while nanoparticles appear to be much larger and less uniform in size in 14 at. % TbAs:InGaAs (b)possibly due to overlap of multiple particles.

Image of FIG. 2.
FIG. 2.

Room temperature electron carrier concentration (a), electron mobility (b), electrical conductivity (c), and Seebeck coefficient (d) of TbAs:InGaAs are plotted as a function of TbAs concentration and compared with similarly doped Si:InGaAs (open square).

Image of FIG. 3.
FIG. 3.

Room temperature thermal conductivity (as measured by TDTR) (a), thermoelectric power factor (b), and thermoelectric figure of merit, ZT(c) as a function of TbAs nanoparticle concentration and compared to Si:InGaAs (open square).

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/content/aip/journal/jap/111/9/10.1063/1.4711095
2012-05-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/9/10.1063/1.4711095
10.1063/1.4711095
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