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Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1−xN thin films
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10.1063/1.4714220
/content/aip/journal/jap/111/9/10.1063/1.4714220
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/9/10.1063/1.4714220
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

ToF-E ERDA profile recorded from a typical sample, Sc0.21Al0.79N (1 at. % oxygen, traces of C and F) grown on Al2O3 with a TiN seed layer.

Image of FIG. 2.
FIG. 2.

X-ray diffraction patterns for ScxAl1 − xN films: AlN (black), Sc0.2Al0.8N (red), and Sc0.3Al0.7N (blue), comparison between different deposition temperatures: (a) Ts = 400 °C, (b) Ts = 600 °C, and (c) Ts = 800 °C. Peaks corresponding to the TiN(111) seed layer are marked by *.

Image of FIG. 3.
FIG. 3.

Dark field TEM micrographs and corresponding SAED patterns (top right corner) of AlN, Sc0.2Al0.8N, and Sc0.3Al0.7N films: (a) AlN, Ts = 400 °C, (b) AlN, Ts = 800 °C, (c) Sc0.2Al0.8N, Ts = 400 °C, (d) Sc0.2Al0.8N, Ts = 800 °C, (e) Sc0.3Al0.7N, Ts = 400 °C, and (f) Sc0.3Al0.7N, Ts = 800 °C. SAED patterns in (a) and (b) are along the zone axis, and in (c)–(e) – along the zone axis.

Image of FIG. 4.
FIG. 4.

Cross-section HR-TEM and the corresponding Fast Fourier transform (top right corner) of AlN, Sc0.2Al0.8N, and Sc0.3Al0.7N films: (a) AlN, Ts = 400 °C, (b) AlN, Ts = 800 °C, (c) Sc0.2Al0.8N, Ts = 400 °C, (d) Sc0.2Al0.8N, Ts = 800 °C, (e) Sc0.3Al0.7N, Ts = 400 °C, and (f) Sc0.3Al0.7N, Ts = 800 °C. In FFT, only spots corresponding to hcp along zone axis in AlN and along in ScAlN are indexed, though spots originating from secondary orientation can also be seen in (d) and (e).

Image of FIG. 5.
FIG. 5.

EDX elemental maps with Sc-rich (green) and Al-rich (dark blue) regions for Sc containing samples (a) Sc0.2Al0.8N, Ts = 400 °C, (b) Sc0.2Al0.8N, Ts = 800 °C, (c) Sc0.3Al0.7N, Ts = 400 °C, and (d) Sc0.3Al0.7N, Ts = 800 °C.

Image of FIG. 6.
FIG. 6.

Leakage currents and their dependence on growth temperature in Sc containing films as comparison to reference AlN sample (solid line).

Image of FIG. 7.
FIG. 7.

Piezoelectric response in the films with different Sc concentrations: (a) as-measured and (b) relative response normalized to AlN response. Theoretical values are based on Ref. 8. PFM – piezoforce microscopy, DBI – double beam interferometry, substrate temperature is specified in the brackets.

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/content/aip/journal/jap/111/9/10.1063/1.4714220
2012-05-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1−xN thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/9/10.1063/1.4714220
10.1063/1.4714220
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