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Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices
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10.1063/1.4730618
/content/aip/journal/jap/112/1/10.1063/1.4730618
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4730618

Figures

Image of FIG. 1.
FIG. 1.

ToF-SIMS profiles of a Ni(45 nm)/Hf(55 nm)/SiO2 sample as deposited and after 1 h of anneal in vacuum at 300 °C, 500 °C, and 700 °C.

Image of FIG. 2.
FIG. 2.

ToF-SIMS profiles of a Ni(60 nm)/Hf (40 nm)/Ni(10 nm)/SiO2 sample as deposited and after 1 h of anneal in vacuum at 300 °C, 400 °C, and 450 °C.

Image of FIG. 3.
FIG. 3.

Cross-section TEM micrograph of multilayer samples after thermal treatment. The nominal Ni concentrations of the samples are (a) 20 at. % Ni, (b) 50 at. % Ni, and (c) 80 at. % Ni.

Image of FIG. 4.
FIG. 4.

(a) EDS line profile of Ni for the samples shown in Fig. 3. (b) The average EDS counts of Ni in the HfNix layer vs. the nominal Ni concentration.

Image of FIG. 5.
FIG. 5.

C-V measurement before and after a heat treatment of 400 °C of a Ni/Hf(35 nm)/Ni(35 nm)/SiO2 sample.

Image of FIG. 6.
FIG. 6.

Cross-section TEM micrograph of a Ni/Hf(20 nm)/Ni(50 nm)/SiO2 capacitor after a 400 °C heat treatment.

Image of FIG. 7.
FIG. 7.

Cross-section TEM micrographs of an in situ heating experiment done on a Ni(91 nm)/Hf(28 nm)/SiO2 stack. (a) Before heating. (b) At 490 °C, the voids immediately appear. (c) and (d) are 12 and 77 min after (b).

Image of FIG. 8.
FIG. 8.

EFTEM elemental map of Ni L2,3-edge of the Ni(91 nm)/Hf(28 nm)/SiO2 stack before heating and at 490 °C after 30 min.

Image of FIG. 9.
FIG. 9.

CAcc of Ni/Hf(20 nm)/Ni(50 nm)/HfO2 samples after heat treatment vs. CAcc of the same samples before heat treatment.

Image of FIG. 10.
FIG. 10.

(a) Cross-section TEM micrograph from a Ni/Hf(10 nm)/Ni(10 nm)/SiO2 capacitor after a heat treatment of 400 °C. 2 EDS line profiles were performed incident to: (b) Voids. (c) Area between voids.

Image of FIG. 11.
FIG. 11.

1/Cacc of Ni(10 nm)/Hf(90 nm)/HfO2 samples after heat treatment vs. 1/Cacc of the same samples before heat treatment.

Image of FIG. 12.
FIG. 12.

Effective work-function vs. Hf thickness ratio for “Hf-under” and “Ni-under” capacitors.

Image of FIG. 13.
FIG. 13.

Flatband voltage vs. EOT plots of several HfNix/HfO2 samples.

Image of FIG. 14.
FIG. 14.

Effective work-function compositional dependence of HfNix/SiO2 and HfNix/HfO2 and the vacuum work-function compositional dependence on HfNix as measured by KP. The experimental data points are connected with a straight line in order to guide the eye.

Image of FIG. 15.
FIG. 15.

Effective work-function values of HfNix/SiO2 and HfNix/HfO2 systems vs. vacuum work-function values.

Image of FIG. 16.
FIG. 16.

An example of a symmetric 6.4 × 6.4 × 22.8 Å3, (100)-oriented Hf2Ni slab model with Hf terminating planes, consisting of two repeating structural units along the [100]-direction with a total thickness of 12.8 Å and a vacuum region having 10 Å thickness. Ni atoms are marked in green, and Hf atoms are marked in aqua.

Tables

Generic image for table
Table I.

AHT/AAD of capacitors with different initial Hf/Ni thicknesses on SiO2 and HfO2.

Generic image for table
Table II.

and values calculated using DFT.

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/content/aip/journal/jap/112/1/10.1063/1.4730618
2012-07-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4730618
10.1063/1.4730618
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