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Observation and control of the surface kinetics of InGaN for the elimination of phase separation
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View: Figures


Image of FIG. 1.
FIG. 1.

Simplified illustration of the modulation scheme used for the MME growth of InGaN.

Image of FIG. 2.
FIG. 2.

RHEED intensity versus time for several metal-shutter open times. Shaded regions indicate metal shutters open.

Image of FIG. 3.
FIG. 3.

Expanded view of three transient RHEED intensities shown in Figure 2. The blue region indicates where the metal shutters were open. The green region, during which the metal shutters were closed, indicates a period of oscillation before returning to steady state.

Image of FIG. 4.
FIG. 4.

Illustration of the mechanism of indium surface segregation during MME of InGaN.

Image of FIG. 5.
FIG. 5.

Characteristic RHEED patterns of InGaN grown with (a) a standard shutter open time, (b) a low shutter open time, and (c) a high shutter open time. Since the RHEED pattern of (c) is so dim that it may appear black to the reader, a brighter, contrast-enhanced version is included as an inset.

Image of FIG. 6.
FIG. 6.

Time of consumption of the metal adlayer plotted versus metal-shutter open time for all conditions shown in Figure 2.

Image of FIG. 7.
FIG. 7.

X-ray diffraction scans, rocking curves, and corresponding AFM morphologies of InGaN layers grown throughout the miscibility gap. AFM images have a 10 nm height scale and inset root-mean-square roughnesses.

Image of FIG. 8.
FIG. 8.

X-ray diffraction scans of independently grown InGaN layers, all at approximately 250 nm thick.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation and control of the surface kinetics of InGaN for the elimination of phase separation