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Temperature enhancement of terahertz responsivity of plasma field effect transistors
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10.1063/1.4733465
/content/aip/journal/jap/112/1/10.1063/1.4733465
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4733465

Figures

Image of FIG. 1.
FIG. 1.

Measured transfer characteristics (a) and photoresponse on gate voltage dependences (b) of studied GaAs HEMT at different temperatures from 275 K to 10 K. The temperature values are listed on the graph.

Image of FIG. 2.
FIG. 2.

Measured transfer characteristics (a) and photoresponse on gate voltage dependences (b) of studied GaN HEMT at different temperatures from 275 K to 5 K. The temperature values are listed on the graph.

Image of FIG. 3.
FIG. 3.

Measured transfer characteristics (a) and photoresponse on gate voltage dependences (b) of studied Si MOSFET at different temperatures from 275 K to 5 K. The temperature values are listed on the graph.

Image of FIG. 4.
FIG. 4.

Comparison of directly measured (dots) and calculated (solid line) from transfer characteristics by Eq. (4) photoresponse on gate voltage dependences of GaAs HEMT for different temperatures (20 K, 75 K, 275 K). For the fitting parameter, we have used following values: A = 6.5 × 10−5 V2 at T = 275 K, A = 5.3 × 10−5 V2 at T = 75 K, A = 9.5 × 10−5 V2 at T = 20 K.

Image of FIG. 5.
FIG. 5.

Comparison of directly measured (dots) and calculated (solid line) from transfer characteristics by Eq. (4) photoresponse on gate voltage dependences of GaN HEMT for different temperatures (20 K, 75 K, 275 K). For the fitting parameter, we have used following values: A = 1.29 × 10−4 V2 at T = 275 K, A = 3.96 × 10−4 V2 at T = 75 K, A = 9.15 × 10−4 V2 at T = 20 K.

Image of FIG. 6.
FIG. 6.

Comparison of directly measured (dots) and calculated (solid line) from transfer characteristics by Eq. (4) photoresponse on gate voltage dependences of Si MOSFET for different temperatures (20 K, 75 K, 275 K). For the fitting parameter, we have used following values: A = 3.65 × 10−4 V2 at T = 275 K, A = 3.79 × 10−3 V2 at T = 275 K, A = 6.1 × 10−3 V2 at T = 20 K.

Image of FIG. 7.
FIG. 7.

Temperature dependence of the subthreshold slope, U*, obtained from transfer characteristics measurements for all studied transistors. Squares are GaAs HEMT, circles are GaN HEMT, stars are Si MOSFET, solid lines represent Eq. (8) for different values of η. Linear dependence at high temperatures (T > 150 K) is defined by diffusive current; the saturation at low temperatures (T < 30 K) can be caused by the effect of an increasing interface state density.

Image of FIG. 8.
FIG. 8.

Evaluation of the maximal photoresponse value with the temperature for all studied transistors. Squares are GaAs HEMT, circles are GaN HEMT, and stars are Si MOSFET.

Tables

Generic image for table
Table I.

Main parameters of studied transistors.

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/content/aip/journal/jap/112/1/10.1063/1.4733465
2012-07-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature enhancement of terahertz responsivity of plasma field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4733465
10.1063/1.4733465
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